RF Transistors - Page 81

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2620 to 2690 MHz
Power:
46.02 to 53.4 dBm
Package Type:
Flanged
Power(W):
40 to 219 W
Gain:
11.5 to 12.5 dB
Supply Voltage:
55 V
Package:
RF12001DHKR3
more info
MRF6V2010GN Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 450 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
50 V
Package:
TO--270G--2 PLASTIC
more info
Description:DC to 30 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
42.04 dBm
Package Type:
Flanged
Power(W):
16 W
Supply Voltage:
12.5 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
17.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:GaN on SiC Transistor X-Band Radars from 11 to 12 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
10.8 to 11.8 GHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
90 W
Gain:
11 dB
Supply Voltage:
50 V
more info
Description:GaAs FET from 5.0 to 5.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.0 to 5.3 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Package:
IK
more info
Description:3 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Supply Voltage:
48 V
more info
RF2L27025CG2 Image
Description:25 W, LDMOS RF Transistor from 700 MHz to 2.7 GHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
700 MHz to 2.7 GHz
Power:
43.97 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
more info
Description:70 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
48 dBm
Package Type:
Flanged
Power(W):
70 W
more info
Description:1200 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
60.79 dBm
Package Type:
Ceramic
Power(W):
1200 W
Supply Voltage:
50 V
more info
QPD0405 Image
Description:Dual Path GaN RF Transistor from 4.4 to 5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
4.4 to 5 GHz
Power:
43.42 dBm (Psat)
Package Type:
Surface Mount
Power(W):
22 W (Psat)
Gain:
15.4 dB
Supply Voltage:
48 V
Package:
DFN
more info

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