RF Transistors - Page 81

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.5 to 2.69 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
19.1 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
A3G18H500-04S Image
Description:1805 to 1880 MHz, 107 W AVG., 48 V, AIRFAST RF Power GaN Transistor
Application Industry:
Wireless Infrastructure
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1.805 to 1.88 GHz
Power:
50.29 dBm
Package Type:
Flanged
Power(W):
107 W
Supply Voltage:
48 Vdc
more info
Description:DC to 30 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
42.04 dBm
Package Type:
Flanged
Power(W):
16 W
Supply Voltage:
12.5 V
more info
Description:275 W Asymmetrical Doherty GaN HEMT from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1805 to 1880 MHz
Power:
53.01 to 55.2 dBm (Psat)
Package Type:
Flanged
Power(W):
200 to 331 W (Psat)
Gain:
13.4 to 13.8 dB
Supply Voltage:
48 to 52 V
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
51.14 to 51.3 dBm
Package Type:
Flanged
Power(W):
134.9 W
Gain:
14.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 5.85 to 6.75 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
5.85 to 6.75 GHz
Power:
47 to 48 dBm
Package Type:
Flanged
Power(W):
50.12 to 63.1 W
Gain:
11.5 to 12.5 dB
Supply Voltage:
24 V
more info
Description:10 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
40 dBm
Package Type:
Die
Power(W):
10 W
Supply Voltage:
48 V
more info
Description:6 W, LDMOS RF Transistor from DC to 870 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 870 MHz
Power:
53.01 to 53.617 dBm
Power(W):
5 to 6 W
Supply Voltage:
13.6 V
more info
Description:100 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.76 dBm
Package Type:
Die
Power(W):
149.97 W
Supply Voltage:
250 V
Package:
TO-247CS
more info
Description:180 Watt, GaN RF Power Transistor from 3.4 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.4 to 3.6 GHz
Power:
53.13 dBm
Package Type:
Flanged
Power(W):
205.59 W
Gain:
22 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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