RF Transistors - Page 86

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:300 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 225 MHz
Power:
54 dBm
Package Type:
Flanged
Power(W):
300 W
more info
Description:650 W, GaN on SiC Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
58.12 dBm
Package Type:
Ceramic
Power(W):
650 W
Supply Voltage:
50 V
more info
Description:6 W GaN Transistor from 2.5 to 5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
Frequency:
2500 to 5000 MHz
Power:
37.78 dBm
Package Type:
Surface Mount
Power(W):
6 W
Gain:
18.6 dB
Supply Voltage:
48 V
Package:
DFN
more info
Description:240 W LDMOS Transistor from 2515 to 2675 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2515 to 2675 MHz
Power:
49.54 to 53.8 dBm (P3dB)
Package Type:
Earless Flanged
Power(W):
90 to 240 W (P3dB)
Gain:
12.8 to 13.5 dB
Supply Voltage:
28 V
more info
Description:750 Watts LDMOS Power Transistor from DC to 1300 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.3 GHz
Power:
58.75 dBm
Package Type:
Flanged
Power(W):
750 W
Gain:
19 dB
Supply Voltage:
50 V
more info
AFT23S160W02GS Image
Description:Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Supply Voltage:
28 V
Package:
NI-780GS-2L
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication, A...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.48 to 3.52 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
14.7 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
Description:Fully-Matched GaN on SiC RF Power Transistor from 5 to 6 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
5.2 to 5.9 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
36 V
more info
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
WP482P45300UH Image
Description:323.59 W, GaN HEMT Transistor from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
55.1 dBm
Package Type:
Flanged
Power(W):
323.59 W
Supply Voltage:
48 V
more info

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