RF Transistors - Page 89

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs HEMT from 12 GHz
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
17 dBm
Package Type:
Surface Mount
Power(W):
0 to 0.05 W
Gain:
8.5 to 10 dB
Supply Voltage:
3 V
Package:
LP
more info
Description:78 W, GaN HEMT Transistor from 1.2 to 1.4 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
48.9 dBm
Package Type:
Flanged
Power(W):
77.62 W
Gain:
17 dB
Supply Voltage:
48 V
Package:
680B
more info
Description:100 W, LDMOS RF Transistor from DC to 1 GHz
Application Industry:
Avionics, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:90 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
49 dBm
Package Type:
Flanged
Power(W):
90 W
more info
Description:30 Watts, 50 Volts, 128µs, 10% 1030-1090MHz
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
44.77 to 45.44 dBm
Package Type:
Die
Power(W):
34.99 W
Supply Voltage:
50 V
Package:
55-78030
more info
QPD0007 Image
Description:20 W GaN on SiC HEMT from DC to 5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 5 GHz
Power:
43 dBm
Package Type:
Surface Mount
Power(W):
19.95 W
Gain:
19 dB
Supply Voltage:
48 V (Drain)
Package:
DFN
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Wireless Infrastructure
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 30 MHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Gain:
12 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:43.01 dBm (20 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Supply Voltage:
28 V
Package:
SOT1212-2
more info
AFM906N Image
Description:Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 941 MHz
Power:
38.33 dBm
Package Type:
Surface Mount
Power(W):
6.81 W
Supply Voltage:
7.5 V
Package:
DFN 4 x 6
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
15.8 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info

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