RF Transistors - Page 88

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:16 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
42.04 dBm
Package Type:
Flanged
Power(W):
16 W
Supply Voltage:
48 V
more info
Description:20 W, LDMOS RF Transistor from 700 MHz to 3.6 GHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 3.6 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
28 V
more info
Description:150 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
51 dBm
Package Type:
Flanged
Power(W):
150 W
more info
Description:52 Volts, 1030/1090 MHz IFF & Mode-S ELM
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
59.03 to 59.34 dBm
Package Type:
Die
Power(W):
859.01 W
Supply Voltage:
52 V
Package:
55-KP
more info
Description:700 MHz to 1 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
50.12 W
Gain:
20 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description:15-W, 28-V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
VHF to 3 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
50 V
more info
BLP05H6250XR Image
Description:10 to 600 MHz, 53.98 dBm, LDMOS Transistor
Application Industry:
Aerospace & Defence, ISM, RF Energy, Wireless Infr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
58.45 dBm
Package Type:
Surface Mount
Power(W):
699.84 W
Supply Voltage:
50 V
Package:
SOT1138-2
more info
MMRF1018NB Image
Description:Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
TO--272WB--4 PLASTIC
more info
IE21385D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
55.85 dBm
Package Type:
Flanged
Power(W):
384.59 W
Gain:
14.6 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:1030 MHz, 11 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
50.41 to 51.93 dBm
Package Type:
Flanged
Power(W):
155.96 W
Gain:
11 dB
Supply Voltage:
48 V
Package:
Ceramic
more info

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