RF Transistors - Page 88

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:8 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Supply Voltage:
28 V
more info
PD84008L-E Image
Description:9 W, LDMOS RF Transistor operating at 870 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
870 MHz
Power:
39.54 dBm
Power(W):
8 to 9 W
Supply Voltage:
7.5 to 9.5 V
more info
Description:10 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 100 MHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Supply Voltage:
125 V
Package:
TO-247CS
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Package Type:
Surface Mount
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:6 W RF Power GaN HEMT in a Plastic Package
Application Industry:
Broadcast, Wireless Infrastructure, Test & Measure...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 6 GHz
Power:
38.39 dBm
Package Type:
Surface Mount
Power(W):
6.9 W
Supply Voltage:
28 V
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
28 V
Package:
SOT502B
more info
MMRF1320N Image
Description:WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
TO--270WBG--4 PLASTIC
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
758 to 858 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
22 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:2900 to 3100 MHz, 9 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.9 to 3.1 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Gain:
9 dB
Supply Voltage:
36 V
Package:
Ceramic
more info

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