RF Transistors - Page 90

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:960 MHz to 1.25 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.25 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Gain:
13.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 5.0 to 5.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.0 to 5.3 GHz
Power:
43.5 to 44.5 dBm
Package Type:
Flanged
Power(W):
22.39 to 28.18 W
Package:
IK
more info
Description:78 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
48.92 dBm
Package Type:
Die
Power(W):
77.98 W
Supply Voltage:
48 V
more info
PD54003-E Image
Description:3 W, LDMOS / MOSFET RF Transistor from 480 to 520 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
480 to 520 MHz
Power:
34.77 dBm
Package Type:
Surface Mount
Power(W):
3 W
Supply Voltage:
7.5 to 9.5 V
more info
Description:8 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
8 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 45 MHz
Power:
54.77 dBm
Package Type:
Die
Power(W):
299.92 W
Supply Voltage:
150 V
Package:
TO-264 [L]
more info
Description:DC to 3.5 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.81 dBm
Package Type:
Flanged
Power(W):
47.97 W
Gain:
16 dB
Supply Voltage:
36 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
48.75 dBm
Package Type:
Flanged
Power(W):
74.99 W
Gain:
9 dB
Supply Voltage:
45 V
Package:
Flange Ceramic
more info
Description:30 W GaN CW/Pulsed Transistor from DC to 6 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
30 W
Gain:
15.5 to 17 dB
more info
A2T23H200W23S Image
Description:Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
47.08 dBm
Package Type:
Flanged
Power(W):
51.05 W
Supply Voltage:
28 V
Package:
ACP--1230S--4L2S
more info

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