RF Transistors - Page 83

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.94 to 55.56 dBm
Package Type:
Surface Mount
Power(W):
312.1 to 360 W
Gain:
11.4 to 12.6 dB
Supply Voltage:
52 Vdc
more info
NPTB00050B Image
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:56.02 dBm (400 W), LDMOS Transistor from 1805 to 1995 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
28 V
Package:
SOT1242B
more info
AFV09P350-04GN Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
720 to 960 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info
Description:200 W Asymmetrical Doherty GaN HEMT from 2520 to 2630 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2520 to 2630 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
40 W
Gain:
14.1 to 14.5 dB
Supply Voltage:
48 to 52 V
Package:
RF18010DKR3
more info
Description:3100 to 3500 MHz, 7.4 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
26.9 dBm
Package Type:
Flanged
Power(W):
0.49 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 7.1 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.1 to 8.5 GHz
Power:
441.5 dBm
Package Type:
Flanged
Power(W):
10 to 14.13 W
Package:
IA
more info
Description:15 W GaN HEMT Transistor Operates up to 10 GHz
Application Industry:
Radar, Wireless Infrastructure, Wireless Communica...
Transistor Type:
HEMT
Technology:
GaN
Frequency:
DC to 10 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Supply Voltage:
28 V
more info
LET9045C Image
Description:59 W, LDMOS / MOSFET RF Transistor from 920 to 960 MHz
Application Industry:
Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
920 to 960 MHz
Power:
47.7 dBm
Power(W):
45 to 59 W
Supply Voltage:
28 to 36 V
more info
Description:30 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
30 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 45 MHz
Power:
55.44 dBm
Package Type:
Die
Power(W):
349.95 W
Supply Voltage:
150 V
Package:
TO-264 [L]
more info

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