RF Transistors - Page 83

2357 RF Transistors from 26 Manufacturers meet your specification.
IE21330D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
55.5 dBm
Package Type:
Flanged
Power(W):
354.81 W
Gain:
14.8 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:25 W LDMOS FET from 500 to 1400 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
500 to 1400 MHz
Power:
43.01 to 43.98 dBm
Package Type:
Surface Mount
Power(W):
20 to 25 W
Supply Voltage:
48 V
more info
Description:5W LDMOS Power Transistor from DC to 3500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 MHz to 3.5 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Supply Voltage:
32 V
Package:
SOT1371-1
more info
AFT23H200-4S2L Image
Description:Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Supply Voltage:
28 V
Package:
NI-1230-4LS2L
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
55.89 dBm
Package Type:
Flanged
Power(W):
388.15 W
Gain:
13.8 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:1200 to 1400 MHz, 8.81 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
51.14 to 54.15 dBm
Package Type:
Flanged
Power(W):
260.02 W
Gain:
8.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 1.9 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1.9 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:20 W GaN HEMT from 2 to 2.2 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
2 to 2.2 GHz
Power:
43.01 to 45 dBm (Psat)
Package Type:
Flanged
Power(W):
20 to 31.62 W (Psat)
Gain:
13.7 to 17 dB
Supply Voltage:
28 V
more info
Description:400 W, LDMOS / FET RF Transistor from 400 MHz to 1 GHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
400 MHz to 1 GHz
Power:
56.021 dBm
Package Type:
Flanged
Power(W):
400 W
Supply Voltage:
50 V
more info
Description:100 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
more info
Description:1 Watt, 20 Volts, Class A UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
30 dBm
Package Type:
Screw Mount, Flanged
Power(W):
1 W
Supply Voltage:
20 V
Package:
55FT-2
more info

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