RF Transistors - Page 93

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:46.02 dBm (40 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
46.02 dBm
Package Type:
Surface Mount
Power(W):
39.99 W
Supply Voltage:
28 V
Package:
SOT1212-2
more info
MRF300AN Image
Description:300 W LDMOS RF Transistor Operating from 1.8 to 250 MHz
Application Industry:
Broadcast, Aerospace & Defence, ISM, Radar, Wirele...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 250 MHz
Power:
54.77 dBm
Package Type:
Through Hole
Power(W):
300 W
Gain:
20.4 to 28.2 dB
Supply Voltage:
50 V
Package:
TO-247
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
18.1 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
399.94 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 9.2 to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
9.2 to 10 GHz
Power:
44 to 45 dBm
Package Type:
Flanged
Power(W):
25.12 to 31.62 W
Gain:
10.5 to 11.5 dB
Supply Voltage:
24 V
more info
Description:15 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Supply Voltage:
28 V
more info
Description:225 W, LDMOS RF Transistor from DC to 1.5 GHz
Application Industry:
Avionics, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.5 GHz
Power:
53.52 dBm
Package Type:
Flanged
Power(W):
225 W
Supply Voltage:
50 V
more info
Description:40 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
40 W
more info
Description:220 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.42 to 54.62 dBm
Package Type:
Flanged
Power(W):
289.73 W
Supply Voltage:
40 V
Package:
55ST-1
more info
Description:11 Watt, GaN Power Transistor from 0.03 GHz to 3 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 3 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Gain:
17 dB
Supply Voltage:
32 V
Package:
3 x 3 mm
more info

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