RF Transistors - Page 91

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:275 W Asymmetrical Doherty GaN HEMT from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1805 to 1880 MHz
Power:
53.01 to 55.2 dBm (Psat)
Package Type:
Flanged
Power(W):
200 to 331 W (Psat)
Gain:
13.4 to 13.8 dB
Supply Voltage:
48 to 52 V
more info
Description:135 Watts GaN on SiC Transistor for S-Band Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
51.3 dBm
Package Type:
Flanged
Power(W):
134.9 W
Gain:
13.5 dB
Supply Voltage:
46 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 5.2 to 5.4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.4 GHz
Power:
551.5 dBm
Package Type:
Flanged
Power(W):
100 to 141.25 W
Gain:
15 to 16.5 dB
Supply Voltage:
24 V
more info
Description:15 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Supply Voltage:
48 V
more info
Description:200 to 230 W, LDMOS RF Transistor from DC to 960 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 960 MHz
Power:
53.01 to 53.617 dBm
Power(W):
200 to 230 W
Supply Voltage:
32 V
more info
Description:20 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:1200 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
60.79 dBm
Package Type:
Ceramic
Power(W):
1200 W
Supply Voltage:
50 V
more info
Description:700 MHz to 1 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Commercial, Wireless Infr...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
700 MHz to 1 GHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
25.12 W
Gain:
20 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:400 MHz to 2.7 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 MHz to 2.7 GHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Supply Voltage:
28 V
Package:
SOT1482-1
more info

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