RF Transistors - Page 91

2357 RF Transistors from 26 Manufacturers meet your specification.
ID38461DR Image
Description:56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 3.98 GHz
Power:
47.5 dBm
Package Type:
Flanged
Power(W):
56.2 W
Gain:
14.5 dB
Supply Voltage:
48 V
more info
Description:1.025 to 1.150 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
21 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.1 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.1 GHz
Power:
47.5 dBm
Package Type:
Flanged
Power(W):
56.23 W
Supply Voltage:
50 V
more info
Description:20 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
43.01 dBm
Package Type:
Die
Power(W):
20 W
Supply Voltage:
48 V
more info
SD57045 Image
Description:45 W, LDMOS / FET RF Transistor from 925 to 965 MHz
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
925 to 965 MHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
45 W
Supply Voltage:
28 V
more info
Description:30 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
30 W
more info
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.4 GHz
Package Type:
Through Hole
Gain:
11.5 to 14.5 dB
Supply Voltage:
25 V
Package:
TO-39
more info
Description:DC to 14 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50.5 dBm
Package Type:
Die
Power(W):
112.2 W
Gain:
19.2 dB
Supply Voltage:
12 to 40 V
more info
Description:15 W, GaN on Si Transistor from 10 MHz to 2.7 GHz
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 1.88 to 2.025 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.88 to 2.025 GHz
Power:
38.5 to 39.6 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.08 to 9.12 W
Supply Voltage:
28 V
more info

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