RF Transistors - Page 94

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:5 W GaN Power Transistor from DC to 6 GHz
Application Industry:
Radar, Military, Wireless Infrastructure, Broadcas...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
37 dBm (Psat)
Package Type:
Surface Mount
Power(W):
5 W (Psat)
Supply Voltage:
28 V
Package:
SOIC Plastic Package
more info
Description:400 Watt LDMOS Power Transistor from 3.1 GHz to 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3100 to 3500 MHz
Power:
56.28 dBm
Package Type:
Chip
Power(W):
425 W
Gain:
12 dB
Supply Voltage:
32 V
more info
AFT05MP075N Image
Description:Airfast Broadband RF Power LDMOS Transistor, 136-520 MHz, 70 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 520 MHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Supply Voltage:
12.5 V
Package:
TO--270WB--4
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Gain:
17.6 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:1030 MHz, 11.1 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
58.2 to 59.7 dBm
Package Type:
Flanged
Power(W):
933.25 W
Gain:
11.1 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 2 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Power:
34.5 to 35.5 dBm
Package Type:
Surface Mount
Power(W):
2.82 to 3.55 W
Package:
XM
more info
Description:350 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
350 W
Supply Voltage:
48 V
more info
Description:10 W, LDMOS / MOSFET RF Transistor from DC to 2 GHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2 GHz
Power:
40 dBm
Power(W):
10 W
Supply Voltage:
13.6 V
more info
Description:175 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
175 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 45 MHz
Power:
54.77 dBm
Package Type:
Die
Power(W):
299.92 W
Supply Voltage:
150 V
Package:
TO-264 [L]
more info

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