RF Transistors - Page 94

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:6 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Broadcast, Test & Measure...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
37.78 dBm
Package Type:
Flanged
Power(W):
6 W
Supply Voltage:
28 V
more info
Description:50 dBm (100 W), LDMOS Transistor from 1 to 1000 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
40 V
Package:
SOT467B
more info
MMRF1007H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
965 MHz to 1.215 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
770 to 900 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Gain:
20.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1030 to 1090 MHz, 17 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
41.76 to 45.31 dBm
Package Type:
Flanged
Power(W):
33.96 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IK
more info
Description:, GaN HEMT Transistor from 1.03 to 1.09 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Package Type:
Flanged
Gain:
19 dB
Supply Voltage:
48 V
Package:
680B
more info
RF3L05250CB4 Image
Description:250 W, LDMOS / FET RF Transistor from DC to 1 GHz
Application Industry:
ISM, Avionics, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1 GHz
Power:
53.97 dBm
Package Type:
Flanged
Power(W):
250 W
Supply Voltage:
28 to 32 V
more info
Description:35 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
35 W
more info
Description:1200 Watts, 50 Volts, 32us, 2% L-Band Avionics 1030/1090 MHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60.79 dBm
Package Type:
Flanged
Power(W):
1199.5 W
Supply Voltage:
50 V
Package:
55-Q03
more info

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