RF Transistors - Page 92

2360 RF Transistors from 26 Manufacturers meet your specification.
A5G26H110N Image
Description:15 W Asymmetrical Doherty Power GaN Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2496 to 2690 MHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Supply Voltage:
48 V
Package:
DFN
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
758 to 858 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
22 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
40.79 to 42.55 dBm
Package Type:
Flanged
Power(W):
17.99 W
Gain:
16.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 3.4 to 3.9 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.4 to 3.9 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IB
more info
Description:25 to 26 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
44.1 dBm
Package Type:
Flanged
Power(W):
25.7 W
Supply Voltage:
48 V
Package:
680B
more info
PD54008-E Image
Description:8 W, LDMOS / MOSFET RF Transistor from 175 to 520 MHz
Application Industry:
Broadcast, Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 520 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
7.5 to 9.5 V
more info
Description:200 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
53 dBm
Package Type:
Flanged
Power(W):
200 W
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Supply Voltage:
50 V
Package:
M113
more info
Description:DC to 3.7 GHz, 48 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.7 GHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Gain:
20 dB
Supply Voltage:
12 to 55 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
40.64 dBm
Package Type:
Flanged
Power(W):
11.59 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info

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