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RF Transistors - Page 92

2357 RF Transistors from 26 Manufacturers meet your specification.
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MRFE6S9125NB Image
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NXP Semiconductors - MRFE6S9125NB

RF Transistor from NXP Semiconductors
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Description:Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V
Application Industry:
Wireless Infrastructure, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
44.31 dBm
Package Type:
Flanged
Power(W):
26.98 W
Supply Voltage:
28 V
Package:
CASE 1484-04, STYLE 1 TO-272 WB-4 PLASTIC
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ID37411D Image
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RFHIC - ID37411D

RF Transistor from RFHIC
www.rfhic.com
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Description:410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3600 to 3800 MHz
Package Type:
Flanged
Gain:
14.4 dB
Supply Voltage:
48 V
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IB0912M210 Image
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Integra Technologies, Inc. - IB0912M210

RF Transistor from Integra Technologies, Inc.
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Description:960 to 1215 MHz, 12.37 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
53.22 to 54.73 dBm
Package Type:
Flanged
Power(W):
297.17 W
Gain:
12.4 dB
Supply Voltage:
50 V
Package:
Ceramic
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FLK017WF Image
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Sumitomo Electric Device Innovations - FLK017WF

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
19.5 to 20.5 dBm
Package Type:
Flanged
Power(W):
0.09 to 0.11 W
Package:
WF
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WP483P7100UH Image
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WAVEPIA Co,. Ltd. - WP483P7100UH

RF Transistor from WAVEPIA Co,. Ltd.
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Description:107.15 W, GaN HEMT Transistor from DC to 3.7 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.3 dBm
Package Type:
Flanged
Power(W):
107.15 W
Gain:
10.6 dB
Supply Voltage:
48 V
more info
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STMicroelectronics - STAC1011-350

RF Transistor from STMicroelectronics
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Description:370 W, LDMOS RF Transistor from 1.03 to 1.09 GHz
Application Industry:
Avionics, Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.441 to 55.682 dBm
Power(W):
350 to 370 W
Supply Voltage:
36 V
more info
L2721 Image
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Polyfet RF Devices - L2721

RF Transistor from Polyfet RF Devices
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Description:15 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
41 dBm
Package Type:
Surface Mount
Power(W):
15 W
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Microchip Technology - GAN_1030_1090MHZ_125W

RF Transistor from Microchip Technology
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Description:125 W, GaN Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1030 to 1090 MHz
Power:
50.96 dBm
Package Type:
Ceramic
Power(W):
125 W
Supply Voltage:
50 V
more info
T1G4020036-FS Image
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Qorvo - T1G4020036-FS

RF Transistor from Qorvo
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Description:DC to 3.5 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.81 dBm
Package Type:
Flanged
Power(W):
47.97 W
Gain:
16 dB
Supply Voltage:
36 V
more info
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MACOM - MAPR-002729-170M00

RF Transistor from MACOM
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Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, Radar, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
52.3 dBm
Package Type:
Flanged
Power(W):
169.82 W
Gain:
9 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
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