RF Transistors - Page 95

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:22 W GaN Transistor from DC to 12 GHz
Application Industry:
Aerospace & Defence, Avionics, Commercial, Wireles...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 12 GHz
Power:
43.98 dBm
Package Type:
Surface Mount
Power(W):
25 W
Gain:
11 dB
Supply Voltage:
32 V
Package:
4 x 3 mm
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:45.44 dBm (35 W), LDMOS Transistor from 10 to 600 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
45.44 dBm
Package Type:
Surface Mount
Power(W):
34.99 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info
MMRF1314GS Image
Description:RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
52 V
Package:
NI--1230GS--4L
more info
Description:GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2620 to 2690 MHz
Power:
46.02 to 53.4 dBm
Package Type:
Flanged
Power(W):
40 to 219 W
Gain:
11.5 to 12.5 dB
Supply Voltage:
55 V
Package:
RF12001DHKR3
more info
Description:2.7 to 3.1 GHz, LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
31.76 dBm
Package Type:
Flanged
Power(W):
1.5 W
Gain:
12.1 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Supply Voltage:
10 V
Package:
IK
more info
Description:75 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
48.75 dBm
Package Type:
Die
Power(W):
74.99 W
Supply Voltage:
48 V
more info
LET9045F Image
Description:59 W, LDMOS / MOSFET RF Transistor from 920 to 960 MHz
Application Industry:
Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
920 to 960 MHz
Power:
47.7 dBm
Power(W):
45 to 59 W
Supply Voltage:
28 to 36 V
more info
Description:125 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
125 W
more info

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