RF Transistors - Page 95

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:20 Watt, DC to 3.5 GaN Transistor for Military Radar & Radio applications
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
14 dB
Supply Voltage:
32 V
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:10 to 600 MHz, 48.75 dBm, LDMOS Transistor
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
48.75 dBm
Package Type:
Surface Mount
Power(W):
74.99 W
Supply Voltage:
50 V
Package:
SOT1224-2
more info
MMRF1312GS Image
Description:RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
900 MHz to 1.215 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
52 V
Package:
NI--1230GS--4L
more info
IE18385D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
55.85 dBm
Package Type:
Flanged
Power(W):
384.59 W
Gain:
15.1 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:5 kW GaN-on-SiC Transistor for L-Band Avionics Applications
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.03 GHz
Power:
67 dBm
Package Type:
Flanged
Power(W):
5 kW (Min)
Gain:
18 to 22 dB
Supply Voltage:
125 V
more info
Description:GaN on SiC, GaN HEMT from 900 MHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
900 MHz
Power:
49.5 dBm
Package Type:
Flanged
Power(W):
89.13 W
Supply Voltage:
50 V
more info
Description:2.6 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
34.15 dBm
Package Type:
Flanged
Power(W):
2.6 W
Supply Voltage:
48 V
more info
Description:40 W, LDMOS RF Transistor from 2.7 to 3.6 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2.7 to 3.6 GHz
Power:
46.021 dBm
Package Type:
Flanged
Power(W):
40 W
Supply Voltage:
28 V
more info
Description:35 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
35 W
more info

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