RF Transistors - Page 100

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:450 W GaN RF IMFET from 3.1 to 3.5 GHz
Application Industry:
Radar, Aerospace & Defence, Test & Measurement, Wi...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.1 to 3.5 GHz
Power:
56.53 dBm
Package Type:
Surface Mount
Power(W):
449.78 W
Gain:
16.5 dB
Supply Voltage:
28 to 55 V
more info
Description:50 W GaN on Silicon Transistor for RF Energy Applications
Application Industry:
RF Energy, Wireless Communication, Radar
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
46.99 dBm
Package Type:
Surface Mount
Power(W):
50 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
TO-272S-2
more info
Description:A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
56.99 to 57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT539A
more info
MHT1008N Image
Description:2.4 GHz RF Power LDMOS Transistor for Consumer and Commercial Cooking Applications
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Power:
40.97 dBm
Package Type:
Surface Mount
Power(W):
12.5 W
Supply Voltage:
28 V
Package:
PLD-1.5W PLASTIC
more info
IE36170WD Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.52 to 3.56 GHz
Power:
52.3 dBm
Package Type:
Flanged
Power(W):
169.82 W
Gain:
14.6 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
Description:1200 to 1400 MHz, 12.5 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Gain:
12.5 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Supply Voltage:
10 V
Package:
IK
more info
Description:25 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 5 GHz
Power:
43.98 dBm
Package Type:
Die
Power(W):
25 W
Supply Voltage:
48 V
more info
Description:175 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
175 W
more info
Description:RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
400 to 500 MHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
40 V
Package:
MS102
more info

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