RF Transistors - Page 100

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:30 Watt GaN HEMT from 30 MHz to 4 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 4 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Gain:
19 dB
Supply Voltage:
32 V
Package:
4 x 3 mm
more info
Description:48 V GaN HEMT Transistor that operates from DC to 3.5 GHz with 50 W Saturated Power
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
17 dB
Supply Voltage:
48 V
Package:
Flange Ceramic
more info
Description:1.805 to 2.2 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.2 GHz
Power:
47.78 dBm
Package Type:
Surface Mount
Power(W):
59.98 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
AFV121KGS Image
Description:Airfast RF Power LDMOS Transistor, 1000 W Peak, 960-1215 MHz, 50 V
Application Industry:
Aerospace & Defence, Radar, Wireless Infrastructur...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
50 V
Package:
NI--1230GS--4L
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication, A...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.48 to 3.52 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
14.7 dB
Supply Voltage:
48 V
Package:
RF12002KR3
more info
Description:1030 MHz, 8.8 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
59.03 to 60.41 dBm
Package Type:
Flanged
Power(W):
1099.01 W
Gain:
8.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 9.5 to 10.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
9.5 to 10.5 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Supply Voltage:
10 V
more info
Description:50 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 8 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
48 V
more info
Description:2 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 850 MHz
Power:
33 dBm
Package Type:
Surface Mount
Power(W):
2 W
more info
Description:RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 860 MHz
Power:
30 dBm
Package Type:
Screw Mount, Flanged
Power(W):
1 W
Supply Voltage:
28 V
Package:
M122
more info

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