RF Transistors - Page 99

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN-on-SiC HEMT Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
45.4 dBm(Psat)
Package Type:
Surface Mount
Power(W):
34.7 W(Psat)
Gain:
17.7 to 18.8 dB (at 3dB Compression)
Supply Voltage:
48 V
Package:
20 Pin QFN Package
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Wireless Infrastructure
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 30 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
13 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:600 Watt LDMOS Transistor for RF Energy Applications
Application Industry:
ISM, RF energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
900 to 930 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
600 W
Gain:
19.8 dB
Supply Voltage:
50 V
more info
MRF6VP21KH Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-235 MHz, 1000 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 235 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
18.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:2.7 to 3.1 GHz, LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Gain:
11.5 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 9.5 to 10.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
9.5 to 10.5 GHz
Power:
35.5 to 36 dBm
Package Type:
Flanged
Power(W):
3.55 to 3.98 W
more info
Description:20 W GaN HEMT from 2 to 2.2 GHz
Application Industry:
Radar, Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
2 to 2.2 GHz
Power:
43.01 to 45 dBm (Psat)
Package Type:
Flanged
Power(W):
20 to 31.62 W (Psat)
Gain:
13.7 to 17 dB
Supply Voltage:
28 V
more info
Description:200 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
53 dBm
Package Type:
Flanged
Power(W):
200 W
more info
Description:150 Watts, 36 Volts, 5 ms, 20% Radar 1200 to 1400 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
36 V
Package:
55ST-1
more info

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