RF Transistors - Page 99

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:100W, DC to 3.5 GHz, GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50.29 dBm
Package Type:
Flanged
Power(W):
106.91 W
Gain:
14 dB
Supply Voltage:
28 V
more info
Description:6 W, RF Power GaN HEMT, Plastic
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.99 to 38.39 dBm
Package Type:
Flanged
Power(W):
6.9 W
Supply Voltage:
28 V
more info
Description:DC to 6 GHz, GaN HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
50 V
Package:
SOT1227B
more info
MRF1511N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 8 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
175 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
7.5 V
Package:
CASE 466-03, STYLE 1 PLD-1.5
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.3 to 2.4 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
32 W
Gain:
15.3 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
Description:3100 to 3500 MHz, 8.5 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 14.0 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
44 to 44.5 dBm
Package Type:
Flanged
Power(W):
25.12 to 28.18 W
Supply Voltage:
10 V
more info
Description:114 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
50.57 dBm
Package Type:
Flanged
Power(W):
114.02 W
Supply Voltage:
48 V
more info
Description:10 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
more info
Description:50 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
46.98 dBm
Package Type:
Ceramic
Power(W):
50 W
Supply Voltage:
50 V
more info

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