RF Transistors - Page 105

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description:70-W, 18.0-GHz, GaN HEMT Die
Application Industry:
Radar, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
10 MHz to 18 GHz
Power:
48.4 dBm
Package Type:
Die
Power(W):
69.18 W
Supply Voltage:
40 V
more info
BLA9G1011LS-300G Image
Description:300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
Application Industry:
Aerospace & Defence, RF Energy, Avionics, Wireless...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.01 dBm
Package Type:
Surface Mount
Power(W):
316.96 W
Supply Voltage:
32 V
Package:
SOT502E
more info
AFT05MS031GN Image
Description:Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 520 MHz
Power:
44.91 dBm
Package Type:
Flanged
Power(W):
30.97 W
Supply Voltage:
13.6 V
Package:
TO--270--2 GULL PLASTIC
more info
Description:410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 4.1 GHz
Power:
52.2 dBm
Package Type:
Flanged
Power(W):
410 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.090 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
799.83 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 6.4 to 7.2 GHz
Application Industry:
SATCOM, Communication, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
6.4 to 7.2 GHz
Power:
44 to 45 dBm
Package Type:
Flanged
Power(W):
25.12 to 31.62 W
Gain:
11.5 to 12.5 dB
Supply Voltage:
24 V
more info
Description:15 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Supply Voltage:
28 V
more info
Description:2 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 850 MHz
Power:
33 dBm
Package Type:
Flanged
Power(W):
2 W
more info
Description:6 Watts, 20 Volts, Class A Linear to 1000 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1 GHz
Power:
37.78 dBm
Package Type:
Screw Mount, Flanged
Power(W):
6 W
Supply Voltage:
20 V
Package:
55FT-2
more info

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