RF Transistors - Page 104

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:20 Watt, DC to 3.5 GaN Transistor for Military Radar & Radio applications
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
14 dB
Supply Voltage:
32 V
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:46.02 dBm (40 W), LDMOS Transistor from 1805 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.17 GHz
Power:
46.02 dBm
Package Type:
Surface Mount
Power(W):
39.99 W
Supply Voltage:
28 V
Package:
SOT1212-2
more info
MRF6V2010GN Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 450 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
50 V
Package:
TO--270G--2 PLASTIC
more info
Description:GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
53.77 to 54.05 dBm
Package Type:
Surface Mount
Power(W):
238.4 to 254.1 W
Gain:
13.1 to 13.8 dB
Supply Voltage:
52 Vdc
more info
Description:3.1 to 3.5 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
50.61 dBm
Package Type:
Flanged
Power(W):
115.08 W
Gain:
14 dB
Supply Voltage:
46 V
Package:
Ceramic
more info
Description:GaAs FET from 13.75 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
13.75 to 14.5 GHz
Power:
44 to 44.5 dBm
Package Type:
Flanged
Power(W):
25.12 to 28.18 W
Supply Voltage:
10 V
more info
Description:145 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
51.61 dBm
Package Type:
Die
Power(W):
144.88 W
Supply Voltage:
48 V
more info
Description:130 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
51 dBm
Package Type:
Flanged
Power(W):
130 W
more info
Description:30 Watts, 50 Volts, 128µs, 10% 1030-1090MHz
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
44.77 to 45.44 dBm
Package Type:
Die
Power(W):
34.99 W
Supply Voltage:
50 V
Package:
55-78030
more info

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