RF Transistors - Page 96

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:RF POWER MOSFET N- CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 25 MHz
Power:
58.75 dBm
Package Type:
Die
Power(W):
749.89 W
Supply Voltage:
250 V
Package:
T2
more info
Description:1.8 to 2.2 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Commercial, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.8 to 2.2 GHz
Power:
45.5 dBm
Package Type:
Flanged
Power(W):
35.48 W
Gain:
15 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description:3.1 to 3.5 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
3.1 to 3.5 GHz
Power:
51.61 dBm
Package Type:
Surface Mount
Power(W):
144.88 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
AC-360B-2/AC-360S-2
more info
Description:750 W LDMOS Power Transistor for 915 MHz Industrial Applications
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
902 to 928 MHz
Power:
58.75 dBm
Package Type:
Flanged
Power(W):
750 W
Gain:
20 to 21.5 dB
Supply Voltage:
50 V
more info
MRF8S9170N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 50 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
28 V
Package:
CASE 2021--03, STYLE 1 OM--780--2
more info
IE36170WD Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.52 to 3.56 GHz
Power:
52.3 dBm
Package Type:
Flanged
Power(W):
169.82 W
Gain:
14.6 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
Description:2.7 to 3.5 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.5 GHz
Power:
34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Gain:
12 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 7.7 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.7 to 8.5 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
Supply Voltage:
10 V
Package:
M2A
more info
Description:15 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Supply Voltage:
48 V
more info
Description:650 Watts - 50 Volts, 150 us, 10% Broad Band 1200 - 1400 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Avio...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
58.13 dBm
Package Type:
Die
Power(W):
650.13 W
Supply Voltage:
50 V
Package:
55-KR
more info

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