RF Transistors - Page 103

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Wireless Infrastructur...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power:
41.2 dBm
Package Type:
Die
Power(W):
13.18 W
Gain:
18.2 dB
Supply Voltage:
32 V
more info
Description:520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
925 to 960 MHz
Power:
57.16 dBm (P3dB)
Package Type:
Earless Flanged
Power(W):
520 W (P3dB)
Supply Voltage:
48 V
Package:
PG-HB2SOF-6-1
more info
Description:A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 128 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT1214A
more info
MRF8P9300HS Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 100 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
28 V
Package:
CASE 375E--04, STYLE 1 NI--1230S
more info
Description:410 W Doherty GaN-on-SiC HEMT from 3700 to 4100 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.7 to 4.1 GHz
Power:
52.2 dBm
Package Type:
Flanged
Power(W):
410 W
Gain:
14.2 dB
Supply Voltage:
48 V
more info
Description:1030 MHz, 8.8 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
59.03 to 60.41 dBm
Package Type:
Flanged
Power(W):
1099.01 W
Gain:
8.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
10 dBm
Package Type:
Chip
Power(W):
0 to 0.01 W
Gain:
9.5 to 10.5 dB
Supply Voltage:
2 V
more info
Description:260 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 5 GHz
Power:
54.15 dBm
Package Type:
Die
Power(W):
260.02 W
Supply Voltage:
48 V
more info
Description:175 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
175 W
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
28 V
Package:
M208
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type