RF Transistors - Page 97

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:1.8 to 2.4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.4 GHz
Power:
53.42 dBm
Package Type:
Flanged
Power(W):
219.79 W
Gain:
24 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:2.9 W GaN HEMT Power Amplifier from 0.5 to 3 GHz
Application Industry:
ISM, Radar, Military
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
0.5 to 3 GHz
Power:
33.01 to 34.62 dBm
Package Type:
Surface Mount
Power(W):
2 to 2.9 W
Supply Voltage:
28 V
Package:
Dual-Flat-No-Lead (DFN)
more info
Description:46.99 dBm (50 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
46.98 dBm
Package Type:
Surface Mount
Power(W):
49.89 W
Supply Voltage:
28 V
Package:
SOT1112A
more info
A2T23H300-24S Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR, 2300-2400 MHz, 69 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
48.2 dBm
Package Type:
Flanged
Power(W):
66.07 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.5 to 2.69 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
19.1 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1200 to 1400 MHz, 8.78 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.215 to 1.4 GHz
Power:
55.74 dBm
Package Type:
Flanged
Power(W):
374.97 W
Gain:
8.7 dB
Supply Voltage:
42 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
42 dBm
Package Type:
Flanged
Power(W):
15.85 W
Supply Voltage:
50 V
more info
Description:8 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 8 GHz
Power:
39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Supply Voltage:
48 V
more info
Description:500 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 225 MHz
Power:
56 dBm
Package Type:
Flanged
Power(W):
500 W
more info
Description:120 W, GaN Transistor from 2700 to 3100 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
2700 to 3100 MHz
Power:
50.79 dBm
Package Type:
Ceramic
Power(W):
120 W
Supply Voltage:
50 V
more info

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