RF Transistors - Page 102

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:45W, 32V DC to 3.5 GHz, Flanged GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description:DC to 3 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3 GHz
Package Type:
Surface Mount
Gain:
14 dB
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.4 to 3.8 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.4 to 3.8 GHz
Power:
47.4 to 48.2 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
54.95 to 66.07 W
Supply Voltage:
28 V
more info
AFT09S200W02GN Image
Description:Airfast RF Power LDMOS Transistor, 716-960 MHz, 41 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
47.48 dBm
Package Type:
Flanged
Power(W):
55.98 W
Supply Voltage:
28 V
Package:
OM--780G--2L PLASTIC
more info
IE27330P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power:
55.19 dBm
Package Type:
Flanged
Power(W):
330.37 W
Gain:
15.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:50 W GaN Power Transistor from 8.9 to 9.4 GHz for X-Band Radars
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
8.9 to 9.4 GHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
80 W
Gain:
10 dB
Supply Voltage:
50 V
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
19.5 to 20.5 dBm
Package Type:
Flanged
Power(W):
0.09 to 0.11 W
Package:
WF
more info
Description:112.2 W, GaN HEMT Transistor from 1.03 to 1.09 GHz
Application Industry:
Test & Measurement, Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
50.5 dBm
Package Type:
Flanged
Power(W):
112.2 W
Supply Voltage:
48 V
Package:
680BU
more info
Description:50 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
50 W
more info
Description:50 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
46.98 dBm
Package Type:
Ceramic
Power(W):
50 W
Supply Voltage:
50 V
more info

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