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RF Transistors - Page 102

2357 RF Transistors from 26 Manufacturers meet your specification.
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QPD1010 Image
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Qorvo - QPD1010

RF Transistor from Qorvo
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Description:1 to 4 GHz, 40.4 to 41 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Gain:
24.7 dB
Supply Voltage:
12 to 60 V
Package:
3 x 3 mm
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CGHV40050 Image
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MACOM - CGHV40050

RF Transistor from MACOM
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Description:50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Power:
48.6 dBm
Package Type:
Flanged
Power(W):
72.44 W
Supply Voltage:
50 V
more info
BLP10H630PG Image
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Ampleon - BLP10H630PG

RF Transistor from Ampleon
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Description:10 MHz to 1 GHz, Power LDMOS transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 MHz to 1 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Supply Voltage:
50 V
Package:
SOT1224-2
more info
MRF8P9040NR1 Image
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NXP Semiconductors - MRF8P9040NR1

RF Transistor from NXP Semiconductors
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Description:CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 960 MHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 V
Package:
CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC
more info
IE18220PG Image
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RFHIC - IE18220PG

RF Transistor from RFHIC
www.rfhic.com
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Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Gain:
18.1 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
IB2226M160 Image
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Integra Technologies, Inc. - IB2226M160

RF Transistor from Integra Technologies, Inc.
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Description:2200 to 2260 MHz, 8.5 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.25 to 2.55 GHz
Power:
52.04 dBm
Package Type:
Flanged
Power(W):
159.96 W
Gain:
8.5 dB
Supply Voltage:
38 V
Package:
Ceramic
more info
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Sumitomo Electric Device Innovations - FLM5964-18F/001

RF Transistor from Sumitomo Electric Device Innovations
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Description:GaAs FET from 5.85 to 6.75 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.85 to 6.75 GHz
Power:
42.5 dBm
Package Type:
Flanged
Power(W):
17.78 W
Package:
IB
more info
WP28010050 Image
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WAVEPIA Co,. Ltd. - WP28010050

RF Transistor from WAVEPIA Co,. Ltd.
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Description:50 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
46.99 dBm
Package Type:
Die
Power(W):
50 W
Supply Voltage:
28 V
more info
SR746 Image
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Polyfet RF Devices - SR746

RF Transistor from Polyfet RF Devices
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Description:300 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
54 dBm
Package Type:
Flanged
Power(W):
300 W
more info
ARF446G Image
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Microchip Technology - ARF446G

RF Transistor from Microchip Technology
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Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.46 dBm
Package Type:
Die
Power(W):
139.96 W
Supply Voltage:
250 V
Package:
TO-247CS
more info
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