RF Transistors - Page 101

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:DC to 3.7 GHz, 48 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.7 GHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Gain:
20 dB
Supply Voltage:
12 to 55 V
more info
Description:400-W, 2900 to 3500-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.9 to 3.5 GHz
Power:
56.13 to 57.28 dBm
Package Type:
Flanged
Power(W):
534.56 W
Supply Voltage:
50 V
more info
Description:52.55 dBm (180 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
52.55 dBm
Package Type:
Surface Mount
Power(W):
179.89 W
Supply Voltage:
28 V
Package:
SOT539B
more info
A2I25D025N Image
Description:Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 2.5 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.9 GHz
Power:
35.05 dBm
Package Type:
Flanged
Power(W):
3.2 W
Supply Voltage:
28 V
Package:
TO--270WB--17 PLASTIC
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
52.17 dBm
Package Type:
Flanged
Power(W):
164.82 W
Gain:
18.3 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1200 to 1400 MHz, 17.8 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.98 to 56.54 dBm
Package Type:
Flanged
Power(W):
450.82 W
Gain:
15.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
25.12 W
Supply Voltage:
50 V
more info
Description:30.9 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
44.9 dBm
Package Type:
Flanged
Power(W):
30.9 W
Supply Voltage:
48 V
more info
Description:20 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 3 GHz
Package Type:
Through Hole
Supply Voltage:
15 V
Package:
TO-39
more info

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