RF Transistors - Page 101

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:24W, 36V, DC to 3.5 GHz, GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
43.8 dBm
Package Type:
Flanged
Power(W):
23.99 W
Gain:
16 dB
Supply Voltage:
36 V
more info
Description:6 W RF Power GaN HEMT in a Plastic Package
Application Industry:
Broadcast, Wireless Infrastructure, Test & Measure...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 6 GHz
Power:
38.39 dBm
Package Type:
Surface Mount
Power(W):
6.9 W
Supply Voltage:
28 V
more info
Description:LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.4 to 3.8 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.4 to 3.8 GHz
Power:
39 to 40 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.94 to 10 W
Supply Voltage:
28 V
more info
MRF6VP3450HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:347 W GaN Power Transistor from 2.3 to 2.5 GHz
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2300 to 2500 MHz
Power:
55.21 to 55.35 dBm
Package Type:
Flanged
Power(W):
332 to 343 W
Gain:
13.5 to 13.6 dB
Supply Voltage:
48 V
more info
Description:960 to 1215 MHz, 8.5 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
57.78 to 59.78 dBm
Package Type:
Flanged
Power(W):
950.6 W
Gain:
8.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 14.0 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
44 to 44.5 dBm
Package Type:
Flanged
Power(W):
25.12 to 28.18 W
Supply Voltage:
10 V
more info
Description:9 W, GaN HEMT Transistor from 2.11 to 2.17 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.11 to 2.17 GHz
Power:
39.5 dBm
Package Type:
Flanged
Power(W):
9 W
Supply Voltage:
48 V
Package:
680B
more info
Description:130 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
51 dBm
Package Type:
Flanged
Power(W):
130 W
more info
Description:E-Series GaN Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
50.79 dBm
Package Type:
Die
Power(W):
119.95 W
Supply Voltage:
50 V
Package:
55-QQP
more info

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