RF Transistors - Page 98

2359 RF Transistors from 26 Manufacturers meet your specification.
Description:DC to 14 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Broa...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
50.5 dBm
Package Type:
Die
Power(W):
112.2 W
Gain:
19.2 dB
Supply Voltage:
12 to 40 V
more info
Description:35-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
46.5 dBm
Package Type:
Flanged
Power(W):
44.67 W
Supply Voltage:
28 V
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 10 to 1500 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 MHz to 1.5 GHz
Power:
48.75 to 53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
32 V
Package:
SOT1121B
more info
MRF6VP3450H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
Application Industry:
ISM, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
470 to 860 MHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:550 W GaN Power Transistor from 1295 to 1305 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1295 to 1305 MHz
Power:
57.4 dBm
Package Type:
Flanged
Power(W):
550 W
Supply Voltage:
50 V
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
40 to 42.3 dBm
Package Type:
Flanged
Power(W):
16.98 W
Gain:
15 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
10 dBm
Package Type:
Chip
Power(W):
0 to 0.01 W
Gain:
9.5 to 10.5 dB
Supply Voltage:
2 V
more info
Description:31.41 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
44.97 dBm
Package Type:
Flanged
Power(W):
31.41 W
Supply Voltage:
28 V
more info
Description:30 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
44 dBm
Package Type:
Flanged
Power(W):
30 W
more info
Description:120 W, GaN Transistor from 2700 to 3100 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
2700 to 3100 MHz
Power:
50.79 dBm
Package Type:
Ceramic
Power(W):
120 W
Supply Voltage:
50 V
more info

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