RF Transistors - Page 109

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:45W, 32V DC to 3.5 GHz, Flanged GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description:400 W Thermally-Enhanced LDMOS Transistor from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
0 to 56.02 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
0 to 400 Watt (P3dB)
Gain:
12.5 to 13.5 dB
Supply Voltage:
32 V
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 400 to 900 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
400 to 900 MHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT539B
more info
AFT05MS031N Image
Description:Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 520 MHz
Power:
44.91 dBm
Package Type:
Flanged
Power(W):
30.97 W
Supply Voltage:
13.6 V
Package:
TO--270--2 PLASTIC
more info
RT12014P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Gain:
17.5 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:850 W GaN-on-SiC Power Transistor from 400 to 450 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
400 to 450 MHz
Power:
59.29 to 60.61 dBm
Package Type:
Flanged
Power(W):
850 to 1150 W
Gain:
19.8 to 21.8 dB
Supply Voltage:
50 V
Package:
Ceramic lid
more info
Description:GaAs FET from 3.1 to 3.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.1 to 3.5 GHz
Power:
42 to 43 dBm
Package Type:
Flanged
Power(W):
15.85 to 19.95 W
Package:
IK
more info
Description:130 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 5 GHz
Power:
51.14 dBm
Package Type:
Die
Power(W):
130.02 W
Supply Voltage:
48 V
more info
Description:15 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
41 dBm
Package Type:
Flanged
Power(W):
15 W
more info
Description:200 Watts, 50 Volts, Class AB or C Milcom 1.5 - 30 MHz
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
1.5 to 30 MHz
Power:
53.01 dBm
Package Type:
2-Hole Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
55HX-2
more info

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