RF Transistors - Page 109

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:2.7 to 3.5 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Test & Measurement, Wi...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.5 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Gain:
18.4 dB
Supply Voltage:
32 to 55 V
Package:
6 x 5 mm
more info
Description:15 W GaN on Si Transistor from DC to 2.7 GHz
Application Industry:
Radar, RF Energy, Avionics, Test & Measurement, Ae...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.7 GHz
Power:
41.8 to 44.3 dBm
Package Type:
Surface Mount
Power(W):
15.13 to 26.91 W
Supply Voltage:
50 V
Package:
DFN
more info
Description:10 to 600 MHz, 45.44 dBm, LDMOS Transistor
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
10 to 600 MHz
Power:
45.44 dBm
Package Type:
Surface Mount
Power(W):
34.99 W
Supply Voltage:
50 V
Package:
SOT1224-2
more info
MMRF1310H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 300 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
NI--780H--4L
more info
Description:GaN on SiC HEMT from 2300 to 2400 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2300 to 2400 MHz
Power:
46.81 to 54.8 dBm
Package Type:
Flanged
Power(W):
48 to 302 W
Gain:
12.5 to 13.5 dB
Supply Voltage:
55 V
Package:
RF18010DKR3
more info
Description:960 to 1215 MHz, 7.8 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 to 58.54 dBm
Package Type:
Flanged
Power(W):
714.5 W
Gain:
7.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 2 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Power:
28.5 to 29.5 dBm
Package Type:
Surface Mount
Power(W):
0.71 to 0.89 W
Supply Voltage:
10 V
Package:
ZM
more info
Description:9 W, GaN HEMT Transistor from 1.93 to 1.99 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1.93 to 1.99 GHz
Power:
39.5 dBm
Package Type:
Flanged
Power(W):
9 W
Supply Voltage:
48 V
Package:
680B
more info
Description:20 W, GaN on SiC HEMT Power Transistor
Application Industry:
Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1 MHz to 3 GHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 100 MHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Supply Voltage:
125 V
Package:
TO-247CS
more info

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