RF Transistors - Page 106

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:DC to 14 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
47.3 dBm
Package Type:
Die
Power(W):
53.7 W
Gain:
19.8 dB
Supply Voltage:
12 to 40 V
more info
Description:145 W GaN-on SiC-HEMT from 8.4 to 9.6 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
7.9 to 9.6 GHz
Power:
50 to 51.61 dBm
Package Type:
4-Hole Flanged
Power(W):
100 to 145 W
Supply Voltage:
48 V
more info
Description:10 MHz to 1 GHz, Power LDMOS transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 MHz to 1 GHz
Power:
49.54 dBm
Package Type:
Surface Mount
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
SOT1223-2
more info
MRF1513N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
34.77 dBm
Package Type:
Surface Mount
Power(W):
3 W
Supply Voltage:
12.5 V
Package:
CASE 466-03, STYLE 1 PLD-1.5
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
55.18 dBm
Package Type:
Flanged
Power(W):
329.61 W
Gain:
15.6 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:150 W CW/Pulsed GaN Transistor from 960 to 1215 MHz
Application Industry:
Avionics, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
960 to 1215 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Gain:
12 to 16 dB
Supply Voltage:
28 V
more info
Description:GaN on SiC, GaN HEMT from 3.1 to 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
56.81 to 57.56 dBm
Package Type:
Flanged
Power(W):
480 to 570 W
Supply Voltage:
50 V
more info
Description:15 W, GaN HEMT Transistor from DC to 8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Flanged
Power(W):
15 W
Supply Voltage:
48 V
more info
Description:600 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 80 MHz
Power:
57 dBm
Package Type:
Flanged
Power(W):
600 W
more info
Description:0.5 Watts, 20 Volts, Class A Linear to 2300 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2.3 GHz
Power:
29.03 to 30 dBm
Package Type:
2-Hole Flanged
Power(W):
0.8 W
Supply Voltage:
20 V
Package:
55BT-2
more info

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