RF Transistors - Page 106

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:43 dBm GaN RF Transistors for X-Band Radar Application
Application Industry:
Aerospace & Defence, Avionics, Commercial, Wireles...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 12 GHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Gain:
11 dB
Supply Voltage:
32 V
Package:
4 x 3 mm
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
1 to 30 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:50 dBm (100 W), LDMOS Transistor from 1 to 1000 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
40 V
Package:
SOT467B
more info
AFV09P350-04N Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
720 to 960 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
48 V
Package:
OM--780G--4L PLASTIC
more info
IE27275D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.575 to 2.635 GHz
Power:
54.39 dBm
Package Type:
Flanged
Power(W):
274.79 W
Gain:
14.1 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:5.2 to 5.9 GHz GaN HEMT Power Transistor for Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
5.2 to 5.9 GHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flanged Ceramic
more info
Description:GaAs FET from 7.1 to 7.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.1 to 7.9 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Package:
IB
more info
Description:3 W, GaN HEMT Transistor from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.5 GHz
Power:
34.77 dBm
Package Type:
Flanged
Power(W):
3 W
Supply Voltage:
48 V
more info
Description:5 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
36 dBm
Package Type:
Surface Mount
Power(W):
5 W
more info
Description:RF AND MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
400 to 500 MHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
40 V
Package:
MS102
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type