RF Transistors - Page 108

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:500 W GaN HEMT from 2.7 to 3.1 GHz for Military Radar
Application Industry:
Radar, Aerospace & Defence, Test & Measurement, Wi...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Gain:
17.7 dB
Supply Voltage:
28 to 55 V
Package:
17.4 x 24 x 4.3 mm
more info
Description:2.7 to 3.3 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.3 GHz
Power:
49.29 dBm
Package Type:
Surface Mount
Power(W):
84.92 W
Gain:
25 dB
Supply Voltage:
50 V
more info
Description:A 350 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
52.86 to 56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
50 V
Package:
SOT1121B
more info
MMRF1304N Image
Description:Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270--2 PLASTIC
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Gain:
18.7 dB
Supply Voltage:
48 V
Package:
DFN66726L-Q2
more info
IGW4000 Image
Description:GaN RF Transistor for Electronic Warfare
Application Industry:
Aerospace & Defence
Technology:
GaN
CW/Pulse:
CW
Package Type:
2-Hole Flanged
Supply Voltage:
100 V
more info
Description:GaAs FET from 14.5 to 15.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 to 15.3 GHz
Power:
33.5 to 34.5 dBm
Package Type:
Flanged
Power(W):
2.24 to 2.82 W
more info
Description:340 W, GaN HEMT Transistor from DC to 5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 5 GHz
Power:
55.31 dBm
Package Type:
Die
Power(W):
339.63 W
Supply Voltage:
48 V
more info
Description:70 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
48 dBm
Package Type:
Flanged
Power(W):
70 W
more info
Description:300 W, GaN Transistor from 2700 to 2900 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
2700 to 2900 MHz
Power:
54.77 dBm
Package Type:
Ceramic
Power(W):
300 W
Supply Voltage:
50 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type