RF Transistors - Page 107

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:285W GaN RF Power Transistor from DC to 2 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 2 GHz
Power:
54.55 dBm
Package Type:
Flanged
Power(W):
285.1 W
Gain:
19 dB
Supply Voltage:
36 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 150 MHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Gain:
17 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
58.45 to 58.75 dBm
Package Type:
Surface Mount
Power(W):
749.89 W
Supply Voltage:
50 V
Package:
SOT1214A
more info
A3G22H400-04S Image
Description:1800 to 2200 MHz, 79 W AVG., 48 V, AIRFAST RF Power GaN Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 2.2 GHz
Power:
48.97 dBm
Package Type:
Flanged
Power(W):
79 W
Supply Voltage:
48 Vdc
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
53.97 dBm
Package Type:
Flanged
Power(W):
249.46 W
Gain:
16.7 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:960 to 1215 MHz, 8.8 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
51.76 to 53.26 dBm
Package Type:
Flanged
Power(W):
211.84 W
Gain:
13 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 3.5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
3.5 GHz
Power:
45.8 dBm
Package Type:
Flanged
Power(W):
38.02 W
Supply Voltage:
50 V
more info
Description:280 W GaN HEMT from 1.03 to 1.09 GHz
Application Industry:
Radar, Test & Measurement, SATCOM, Wireless Infras...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
54.53 dBm
Package Type:
Flanged
Power(W):
283.79 W
Gain:
17.53 dB
Supply Voltage:
48 V
more info
Description:35 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
45 dBm
Package Type:
Flanged
Power(W):
35 W
more info
Description:15 Watts, 50 Volts, 4.5mS, 35% 1200 to 1400MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
41.76 to 42.79 dBm
Package Type:
Die
Power(W):
19.01 W
Supply Voltage:
50 V
Package:
55-QQP
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type