RF Transistors - Page 107

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:285 W, 36 V, DC to 2 GHz, Flanged Mount, GaN RF Power Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 2 GHz
Power:
54.55 dBm
Package Type:
Flanged
Power(W):
285.1 W
Gain:
19 dB
Supply Voltage:
36 V
more info
Description:180-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 2.5 GHz
Power:
53.4 dBm
Package Type:
Flanged
Power(W):
218.78 W
Supply Voltage:
28 V
more info
Description:400 W GaN Asymmetric Doherty Power Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2300 to 2690 MHz
Power:
56.02 dBm
Package Type:
Flanged
Power(W):
400 W
more info
MRF6V2150NB Image
Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 450 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.4 to 3.6 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
17.1 dB
Supply Voltage:
48 V
Package:
RF12001KR3
more info
Description:30 to 512 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
30 to 512 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:GaAs FET from 14.0 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.0 to 14.5 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
more info
Description:33 W, GaN HEMT Transistor from DC to 10 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 10 GHz
Power:
45.19 dBm
Package Type:
Die
Power(W):
33.04 W
Supply Voltage:
48 V
more info
Description:20 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:2.5 Watts, 20 Volts, Class A Linear to 2300 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2.3 GHz
Power:
33.8 to 33.98 dBm
Package Type:
2-Hole Flanged
Power(W):
2.5 W
Supply Voltage:
20 V
Package:
55BT-2
more info

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