RF Transistors - Page 110

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:2.5 to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.5 to 2.7 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
16 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:40-W, 6.0-GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
46.02 dBm
Package Type:
Die
Power(W):
39.99 W
Supply Voltage:
50 V
more info
Description:100 W GaN-Based Doherty Power Transistor from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.12 W
Supply Voltage:
50 V
more info
MRF6V12250HS Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
44.39 dBm
Package Type:
Flanged
Power(W):
27.48 W
Supply Voltage:
50 V
Package:
CASE 465--06, STYLE 1 NI--780
more info
Description:GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.94 to 55.56 dBm
Package Type:
Surface Mount
Power(W):
312.1 to 360 W
Gain:
11.4 to 12.6 dB
Supply Voltage:
52 Vdc
more info
Description:Fully-Matched GaN on SiC RF Power Transistor from 5 to 6 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
5.2 to 5.9 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
36 V
more info
Description:GaAs FET from 7.7 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.7 to 8.5 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IA
more info
Description:50 W, GaN HEMT Transistor from DC to 15 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
46.99 dBm
Package Type:
Die
Power(W):
50 W
Supply Voltage:
28 V
more info
Description:175 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 175 MHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
175 W
more info
Description:300 Watts - 50 Volts, 128uS, 10% Broad Band 960 - 1215 MHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
55-KR
more info

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