RF Transistors - Page 110

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Wireless Infrastructur...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power:
44.5 dBm
Package Type:
Die
Power(W):
28.18 W
Gain:
19.6 dB
Supply Voltage:
32 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 400 MHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
14 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:47.78 dBm (60 W), LDMOS Transistor from 2300 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.69 GHz
Power:
46.23 to 46.99 dBm
Package Type:
Surface Mount
Power(W):
50 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
MRF13750HS Image
Description:RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 1.3 GHz
Power:
58.13 to 58.75 dBm
Package Type:
Flanged
Power(W):
749.89 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
IE18110P Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1.805 to 1.88 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
18.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:5.2 to 5.9 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
33.98 dBm
Package Type:
Flanged
Power(W):
2.5 W
Gain:
13 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Package Type:
Surface Mount
Gain:
12 to 13.5 dB
Supply Voltage:
2 V
Package:
LP
more info
Description:33.88 W, GaN HEMT Transistor from DC to 3.7 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
45.3 dBm
Package Type:
Flanged
Power(W):
33.88 W
Gain:
14.8 dB
Supply Voltage:
48 V
more info
Description:15 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 400 MHz
Power:
41 dBm
Package Type:
Flanged
Power(W):
15 W
more info
Description:250 W, GaN Transistor from 2700 to 2900 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
2700 to 2900 MHz
Power:
53.97 dBm
Package Type:
Pallet
Power(W):
250 W
Supply Voltage:
50 V
more info

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