RF Transistors - Page 112

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:DC to 18 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Wire...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 18 GHz
Power:
38 dBm
Package Type:
Die
Power(W):
6.31 W
Gain:
18 dB
Supply Voltage:
12 to 40 V
more info
Description:8 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
39.3 dBm
Package Type:
Die
Power(W):
8.51 W
Supply Voltage:
28 V
more info
Description:2.5 to 2.7 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
28 V
Package:
SOT502A
more info
MMRF1020-04N Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 100 W AVG., 48 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
720 to 960 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
48 V
Package:
OM--780--4L PLASTIC
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
47.4 dBm
Package Type:
Flanged
Power(W):
54.95 W
Gain:
15.7 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:2700 to 3100 MHz, 9.4 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
9.4 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 8.5 to 9.6 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
8.5 to 9.6 GHz
Power:
35.5 to 36 dBm
Package Type:
Flanged
Power(W):
3.55 to 3.98 W
Package:
M2A
more info
Description:45 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
45 W
Supply Voltage:
48 V
more info
Description:20 W, Si VDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
VDMOS
Technology:
Si
Frequency:
1 to 500 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
41.76 to 42.79 dBm
Package Type:
Die
Power(W):
19.01 W
Supply Voltage:
50 V
Package:
55-QQ
more info

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