RF Transistors - Page 112

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:DC to 14 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Wireless Infrastructur...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Power:
38.4 dBm
Package Type:
Die
Power(W):
6.92 W
Gain:
20.4 dB
Supply Voltage:
32 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
8.5 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 128 MHz
Power:
60 dBm
Package Type:
Surface Mount
Power(W):
1000 W
Supply Voltage:
50 V
Package:
SOT539A
more info
AFT09MS031N Image
Description:Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 941 MHz
Power:
44.91 dBm
Package Type:
Flanged
Power(W):
30.97 W
Supply Voltage:
13.6 V
Package:
TO--270--2 PLASTIC
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.11 to 2.17 GHz
Power:
49.29 dBm
Package Type:
Flanged
Power(W):
84.92 W
Gain:
20.7 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
50.79 to 52.5 dBm
Package Type:
Flanged
Power(W):
177.83 W
Gain:
18.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.2 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.2 GHz
Power:
46.5 to 47.5 dBm
Package Type:
Flanged
Power(W):
44.66 to 56.2 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
Description:25 W, GaN HEMT Transistor from DC to 15 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
43.98 dBm
Package Type:
Die
Power(W):
25 W
Supply Voltage:
28 V
more info
Description:175 W, Si LDMOS Power Transistor
Application Industry:
Broadcast, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1100 MHz
Power:
52 dBm
Package Type:
Flanged
Power(W):
175 W
more info
Description:E-Series GaN Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
50.79 dBm
Package Type:
Die
Power(W):
119.95 W
Supply Voltage:
50 V
Package:
55-78030
more info

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