RF Transistors - Page 111

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:13.5 W GaN-on-SiC HEMT from 2.5 to 5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.5 to 5 GHz
Package Type:
Surface Mount
Gain:
16 dB
Supply Voltage:
48 V
Package:
DFN Package
more info
Description:1400 W GaN on Sic HEMT from 960 to 1215 MHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
960 to 1215 MHz
Power:
61.46 dBm
Package Type:
Flanged
Power(W):
1400 W
Gain:
17 dB
Supply Voltage:
50 V
more info
Description:35 W LDMOS Power Transistor from 1 to 650 MHz
Application Industry:
Broadcast, Radar, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 650 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
35 W
Supply Voltage:
65 V
more info
MMRF1009HS Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780S--2L
more info
IE27275D Image
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.575 to 2.635 GHz
Power:
54.39 dBm
Package Type:
Flanged
Power(W):
274.79 W
Gain:
14.1 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:2.90 to 3.15 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.90 to 3.15 GHz
Power:
48.75 to 53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
13.3 dB
Supply Voltage:
45 V
Package:
Ceramic
more info
Description:GaAs FET from 7.7 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.7 to 8.5 GHz
Power:
45 to 45.5 dBm
Package Type:
Flanged
Power(W):
31.62 to 35.48 W
Supply Voltage:
10 V
Package:
IA
more info
Description:76.38 W, GaN HEMT Transistor from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
48.83 dBm
Package Type:
Flanged
Power(W):
76.38 W
Supply Voltage:
48 V
more info
Description:60 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast, Wireless Infrastru...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 1000 MHz
Power:
47 dBm
Package Type:
Flanged
Power(W):
60 W
more info
Description:125 Watts, 36 Volts, 100µs, 10% Radar 2700-2900 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Supply Voltage:
36 V
Package:
55KS-1
more info

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