RF Transistors - Page 166

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Wireless Infrastructure, Wireless Commun...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
39.5 dBm
Package Type:
Surface Mount
Power(W):
8.91 W
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Gain:
9.5 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:1700 W RF LDMOS Transistor from DC to 500 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 500 MHz
Power:
62.3 dBm
Package Type:
Flanged
Power(W):
1700 W
Gain:
26.2 dB
Supply Voltage:
50 V
more info
A2I25D025GN Image
Description:Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 2.5 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.9 GHz
Power:
35.05 dBm
Package Type:
Flanged
Power(W):
3.2 W
Supply Voltage:
28 V
Package:
TO--270WBG--17 PLASTIC
more info
Description:1025 to 1150 MHz, 10.3 dB Bipolar Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
56.99 to 58.49 dBm
Package Type:
Flanged
Power(W):
706.32 W
Gain:
10.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
10 dBm
Package Type:
Chip
Power(W):
0 to 0.01 W
Gain:
9.5 to 10.5 dB
Supply Voltage:
2 V
more info
Description:300 W, GaN on SiC Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
54.77 dBm
Package Type:
Ceramic
Power(W):
300 W
Supply Voltage:
50 V
more info
Description:120-W, 2300 to 2700-MHz, GaN HEMT for WiMAX and LTE
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.3 to 2.7 GHz
Power:
51.13 dBm
Package Type:
Flanged
Power(W):
129.72 W
Supply Voltage:
50 V
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1300 to 1300 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
50 V
Package:
SOT1121A
more info
A2T23H200W23S Image
Description:Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
47.08 dBm
Package Type:
Flanged
Power(W):
51.05 W
Supply Voltage:
28 V
Package:
ACP--1230S--4L2S
more info

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