RF Transistors - Page 166

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC, GaN HEMT from 1.96 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1.96 GHz
Power:
49.5 dBm
Package Type:
Flanged
Power(W):
89.13 W
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.2 to 2.6 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Gain:
8 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:1.805 to 1.99 GHz, Power LDMOS transistor
Application Industry:
Wireless Infrastructure, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.99 GHz
Power:
55.5 dBm
Package Type:
Surface Mount
Power(W):
354.81 W
Supply Voltage:
28 V
Package:
SOT1258-3
more info
MMRF1005HS Image
Description:Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
53.62 to 53.62 dBm
Package Type:
Flanged
Power(W):
230.14 W
Supply Voltage:
50 V
Package:
NI--780S--2L
more info
Description:1030 MHz, 13.8 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
43.01 to 44.55 dBm
Package Type:
Flanged
Power(W):
28.51 W
Gain:
13.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 1.5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
1.5 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Package:
IB
more info
Description:8 Watts, 26.5 Volts, Class A UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
39.03 dBm
Package Type:
2-Hole Flanged
Power(W):
8 W
Supply Voltage:
26.5 V
Package:
55JV-2
more info
Description:10 MHz to 2.7 GHz, GaN on Si HEMT for RF Energy, Aerospace & Defence Application
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description:3-Stage LDMOS Integrated Doherty MMIC from 4.7 to 5 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
4.7 to 5 GHz
Power:
40.79 dBm
Package Type:
Surface Mount
Power(W):
12 W
Supply Voltage:
28 V
Package:
LGA
more info
MMRF1314HS Image
Description:RF POWER LDMOS TRANSISTOR 1200-1400 MHz, 1000 W Peak, 52 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
52 V
Package:
NI--1230S--4S
more info

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