RF Transistors - Page 167

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:1200 to 1400 MHz, 14.2 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.215 to 1.4 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
14.2 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs FET from 10.7 to 11.7 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
10.7 to 11.7 GHz
Power:
38.5 to 39 dBm
Package Type:
Flanged
Power(W):
7.08 to 7.94 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 45 MHz
Power:
54.77 dBm
Package Type:
Die
Power(W):
299.92 W
Supply Voltage:
150 V
Package:
TO-264 [L]
more info
Description:250 W GaN HEMT Transistor from DC to 2 GHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 1 GHz
Power:
54.1 to 54.8 dBm
Package Type:
Flanged
Power(W):
257 to 302 Watts
Supply Voltage:
50 V
more info
Description:70 W LDMOS Power Transistor from 10 to 1500 MHz
Application Industry:
ISM, Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
10 to 1500 MHz
Power:
48.45 dBm
Package Type:
Surface Mount
Power(W):
69.98 W
Supply Voltage:
32 V
more info
MRF8P9040GN Image
Description:CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 960 MHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 V
Package:
CASE 1487--05, STYLE 1 TO--270 WB--4 GULL PLASTIC
more info
Description:2.7 to 3 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3 GHz
Power:
48.13 to 49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Gain:
14.8 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 7.7 to 8.5 GHz
Application Industry:
SATCOM, Wireless Infrastructure, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
7.7 to 8.5 GHz
Power:
44 to 45 dBm
Package Type:
Flanged
Power(W):
25.12 to 31.62 W
Gain:
11 to 12 dB
Supply Voltage:
24 V
more info
Description:600 W, GaN Transistor from 1200 to 1400 MHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1200 to 1400 MHz
Power:
57.78 dBm
Package Type:
Ceramic
Power(W):
600 W
Supply Voltage:
50 V
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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