RF Transistors - Page 167

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 7.7 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.7 to 8.5 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IA
more info
Description:RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
41.76 dBm
Package Type:
Screw Mount, Flanged
Power(W):
15 W
Supply Voltage:
12.5 V
Package:
M122
more info
Description:70-W, 18.0-GHz, GaN HEMT Die
Application Industry:
Radar, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
10 MHz to 18 GHz
Power:
48.4 dBm
Package Type:
Die
Power(W):
69.18 W
Supply Voltage:
40 V
more info
Description:20 W LDMOS Power Transistor from 10 MHz to 2700 MHz
Application Industry:
Radar, Avionics, Broadcast, Communication, Wireles...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 to 2700 MHz
Power:
43 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
28 V
more info
MRF8S9232N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 865-960 MHz, 63 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
62.95 W
Supply Voltage:
28 V
Package:
CASE 2021--03, STYLE 1 OM--780--2 PLASTIC
more info
Description:960 to 1215 MHz, 10.7 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
44.77 to 46.26 dBm
Package Type:
Flanged
Power(W):
42.27 W
Gain:
10.7 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.14 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.14 GHz
Power:
49.5 dBm
Package Type:
Flanged
Power(W):
89.13 W
Supply Voltage:
50 V
more info
Description:0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
26.9 dBm
Package Type:
Screw Mount, Flanged
Power(W):
0.49 W
Supply Voltage:
20 V
Package:
55FT-2
more info
Description:25 W LDMOS FET from 500 to 1400 MHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
500 to 1400 MHz
Power:
43.01 to 43.98 dBm
Package Type:
Surface Mount
Power(W):
20 to 25 W
Supply Voltage:
48 V
more info

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