RF Transistors - Page 169

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:500 Watts, 50 Volts, 450 us, 35% 960 - 1215 MHz Broad Band Data Link
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 to 57.4 dBm
Package Type:
Flanged
Power(W):
549.54 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
57.4 dBm
Package Type:
Flanged
Power(W):
549.54 W
Gain:
7.4 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
SOT502B
more info
AFT23H200-4S2L Image
Description:Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Supply Voltage:
28 V
Package:
NI-1230-4LS2L
more info
Description:2700 to 3500 MHz, 10 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.5 GHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
11.99 W
Gain:
10 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 10.7 to 11.7 GHz
Application Industry:
SATCOM, Wireless Infrastructure, Broadcast
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
10.7 to 11.7 GHz
Power:
43 to 44 dBm
Package Type:
Flanged
Power(W):
19.95 to 25.12 W
Gain:
9 to 10 dB
Supply Voltage:
24 V
more info
Description:100 W, GaN Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
960 to 1215 MHz
Power:
50 dBm
Package Type:
Ceramic
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
44.55 dBm
Package Type:
Flanged
Power(W):
28.51 W
Gain:
7.5 dB
Supply Voltage:
40 V
Package:
Flange Ceramic
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 10 to 1500 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 MHz to 1.5 GHz
Power:
48.75 to 53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
32 V
Package:
SOT1121B
more info
AFT09H310-04GS Image
Description:Airfast RF Power LDMOS Transistor, 920-960 MHz, 56 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.48 dBm
Package Type:
Flanged
Power(W):
55.98 W
Supply Voltage:
28 V
Package:
NI-1230S-4S
more info

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