RF Transistors - Page 169

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:15 W, GaN Transistor from 50 to 3500 MHz
Technology:
GaN
CW/Pulse:
CW
Frequency:
50 to 3500 MHz
Power:
41.76 dBm
Package Type:
Ceramic
Power(W):
15 W
Supply Voltage:
50 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Broadcast, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 400 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
12 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:300 W LDMOS Power Transistor from 2400 MHz to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Power:
54.7 dBm
Package Type:
Surface Mount
Power(W):
295.12 W
Supply Voltage:
32 V
Package:
SOT1250-1
more info
MRFE6VS25GN Image
Description:Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
Application Industry:
Aerospace & Defence, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270--2 GULL PLASTIC
more info
Description:1200 to 1400 MHz, 14.5 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 to 58.45 dBm
Package Type:
Flanged
Power(W):
699.84 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 6.4 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Package:
IK
more info
Description:650 Watts - 50 Volts, 128 us, 10% Broad Band Data Link 960 - 1215 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure, Avio...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
58.13 dBm
Package Type:
Flanged
Power(W):
650.13 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:100-W, DC CGHV40100 3-GHz, 50-V, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 3 GHz
Power:
50.64 dBm
Package Type:
Flanged
Power(W):
115.88 W
Supply Voltage:
50 V
more info
Description:40 dBm (10 W), LDMOS Transistor from 1 to 2200 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2.2 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT538A
more info
MMRF1004GN Image
Description:GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.6 to 2.2 GHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270G--2 PLASTIC
more info

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