RF Transistors - Page 168

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:500 W HF/VHF LDMOS Transistor from 10 to 700 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 700 MHz
Power:
57 dBm
Package Type:
Flanged
Power(W):
500 W
Supply Voltage:
50 V
more info
MMRF5018HS Image
Description:125 W GaN Power Transistor from 1 to 2700 MHz
Application Industry:
Military, Radar, Broadcast, Wireless Infrastructur...
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
450 to 2700 MHz
Power:
50 to 50.97 dBm
Package Type:
Flanged
Power(W):
100 to 125 W
Supply Voltage:
50 V
more info
Description:1025 to 1150 MHz, 11.3 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
40 to 41.49 dBm
Package Type:
Flanged
Power(W):
14.09 W
Gain:
11.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
14 dBm
Package Type:
Chip
Power(W):
0 to 0.03 W
Gain:
11 to 13 dB
Supply Voltage:
2 V
more info
Description:RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.4 GHz
Package Type:
Through Hole
Gain:
11.5 to 14.5 dB
Supply Voltage:
25 V
Package:
TO-39
more info
Description:12 W LDMOS Transistor from 390 to 450 MHz
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
390 to 450 MHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
12 W
Gain:
23 to 25 dB
Supply Voltage:
50 V
more info
Description:52.04 dBm (160 W), LDMOS Transistor from 700 to 1000 MHz
Application Industry:
Broadcast, ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
32 V
Package:
SOT502A
more info
MRF6VP121KH Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
965 MHz to 1.215 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:2900 to 3100 MHz, 8.7 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.9 to 3.1 GHz
Power:
51.9 to 53.52 dBm
Package Type:
Flanged
Power(W):
224.91 W
Gain:
8.7 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 7.7 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.7 to 8.5 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IA
more info

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