RF Transistors - Page 168

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:53.01 dBm (200 W), LDMOS Transistor from 10 to 1500 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 MHz to 1.5 GHz
Power:
48.75 to 53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
32 V
Package:
SOT1121B
more info
MRF6V2300N Image
Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 600 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC
more info
Description:2700 to 3500 MHz, 10 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.5 GHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
11.99 W
Gain:
10 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs FET from 3.7 to 4.2 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.7 to 4.2 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IK
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
M174
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.856 GHz
Power:
44.55 dBm
Package Type:
Flanged
Power(W):
28.51 W
Gain:
7.5 dB
Supply Voltage:
40 V
Package:
Flange Ceramic
more info
Description:10 to 600 MHz, 50.41 dBm, LDMOS Transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 600 MHz
Power:
50.41 dBm
Package Type:
Surface Mount
Power(W):
109.9 W
Supply Voltage:
50 V
Package:
SOT1224-2
more info
MRFX1K80N Image
Description:1800 W CW, LDMOS Transistor from 1.8 to 400 MHz
Application Industry:
ISM, Aerospace & Defence, Radar, Wireless Infrastr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 400 MHz
Power:
62.55 dBm
Package Type:
Flanged
Power(W):
1800 W
Supply Voltage:
65 V
Package:
OM--1230--4L
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 5.85 to 7.2 GHz
Application Industry:
SATCOM, Broadcast, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
5.85 to 7.2 GHz
Power:
41.5 to 43 dBm
Package Type:
Surface Mount
Power(W):
14.13 to 19.95 W
Gain:
11 to 13 dB
Supply Voltage:
24 V
more info

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