RF Transistors - Page 171

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:250 W LDMOS Power Transistor from 2400 to 2500 MHz
Application Industry:
RF Energy, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250 W
Gain:
13 to 15 dB
Supply Voltage:
32 V
more info
MMRF1305HS Image
Description:Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--780S--4L
more info
Description:1200 to 1400 MHz, 14.2 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.215 to 1.4 GHz
Power:
46.02 dBm
Package Type:
Flanged
Power(W):
39.99 W
Gain:
14.2 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs FET from 10.7 to 11.7 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
10.7 to 11.7 GHz
Power:
38.5 to 39 dBm
Package Type:
Flanged
Power(W):
7.08 to 7.94 W
more info
Description:RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
50 dBm
Package Type:
2-Hole Flanged
Power(W):
100 W
Supply Voltage:
12.5 V
Package:
M111
more info
Description:900 MHz to 1.4 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
900 MHz to 1.4 GHz
Power:
50.97 dBm
Package Type:
Surface Mount
Power(W):
125.03 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
AC-400B-2/AC-400S-2
more info
Description:850 W LDMOS Doherty Power Transistor from 617 to 960 MHz
Application Industry:
Base Station, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
617 to 960 MHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
48 V
Package:
Plastic Earless Flang 6 Leads
more info
MRF8P8300H Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 790-820 MHz, 96 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
790 to 820 MHz
Power:
49.82 dBm
Package Type:
Flanged
Power(W):
95.94 W
Supply Voltage:
28 V
Package:
NI--1230--4H
more info
Description:1030 MHz, 8.4 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
53.98 to 55.95 dBm
Package Type:
Flanged
Power(W):
393.55 W
Gain:
9.4 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 14.5 to 15.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 to 15.3 GHz
Power:
36 to 37 dBm
Package Type:
Flanged
Power(W):
3.98 to 5.01 W
more info

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