RF Transistors - Page 171

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:44.77 dBm (30 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Supply Voltage:
32 V
Package:
SOT1135B
more info
MMRF1306H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
60.97 dBm
Package Type:
Flanged
Power(W):
1250.26 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
Description:5.2 to 5.9 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
33.98 dBm
Package Type:
Flanged
Power(W):
2.5 W
Gain:
13 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 13.75 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
13.75 to 14.5 GHz
Power:
39 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.94 to 8.91 W
Supply Voltage:
10 V
more info
Description:RF POWER VERTICAL MOSFET
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 175 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
28 V
Package:
M208
more info
Description:490 W GaN HEMT Transistor from 2.11 to 2.17 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.11 to 2.17 GHz
Power:
56.9 dBm
Package Type:
Flanged
Power(W):
490 W
Gain:
13 to 14.4 dB
Supply Voltage:
48 V
more info
Description:1,000 Watt Pulsed LDMOS Transistor for Avionics
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
60 dBm
Package Type:
Surface Mount
Power(W):
1000 W
Supply Voltage:
50 V
Package:
SOT539B
more info
MMRF5018HS Image
Description:125 W GaN Power Transistor from 1 to 2700 MHz
Application Industry:
Military, Radar, Broadcast, Wireless Infrastructur...
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
450 to 2700 MHz
Power:
50 to 50.97 dBm
Package Type:
Flanged
Power(W):
100 to 125 W
Supply Voltage:
50 V
more info
Description:1030 MHz, 11 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
50.41 to 51.93 dBm
Package Type:
Flanged
Power(W):
155.96 W
Gain:
11 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:GaAs FET from 7.1 to 7.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.1 to 7.9 GHz
Power:
35 to 36 dBm
Package Type:
Surface Mount
Power(W):
3.16 to 3.98 W
Supply Voltage:
10 V
Package:
IK
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type