RF Transistors - Page 170

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 9.5 to 10.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
9.5 to 10.5 GHz
Power:
43 to 44 dBm
Package Type:
Flanged
Power(W):
19.95 to 25.12 W
Supply Voltage:
10 V
more info
Description:1 Watts, 28 Volts Class-C, CW 1.0 to 2.0 GHz
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
1 to 2 GHz
Power:
30 dBm
Package Type:
2-Hole Flanged
Power(W):
1 W
Supply Voltage:
28 V
Package:
M210
more info
Description:45 W GaN HEMT from DC to 8 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 8000 GHz
Power:
46.53 dBm
Package Type:
Die
Power(W):
44.98 W
Supply Voltage:
28 V
more info
Description:A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
58.45 to 58.75 dBm
Package Type:
Surface Mount
Power(W):
749.89 W
Supply Voltage:
50 V
Package:
SOT1214C
more info
AFT09S282N Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 80 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
720 to 960 MHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Supply Voltage:
28 V
Package:
OM--780--2 PLASTIC
more info
IGN1012S2500 Image
Description:2.5 kW, L-Band GaN Transistor for Directed Energy Applications
Application Industry:
Military
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.2 GHz
Power:
63.98 dBm
Package Type:
2-Hole Flanged
Power(W):
2.5 kW
Gain:
17 dB
Supply Voltage:
100 V
more info
Description:GaN on SiC, GaN HEMT from 7.7 to 8.5 GHz
Application Industry:
SATCOM, Broadcast, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
7.7 to 8.5 GHz
Power:
49 to 50 dBm
Package Type:
Flanged
Power(W):
79.43 to 100 W
Gain:
11 to 12 dB
Supply Voltage:
24 V
more info
Description:200 Watts, 50 Volts, Class AB or C Milcom 1.5 - 30 MHz
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
1.5 to 30 MHz
Power:
53.01 dBm
Package Type:
2-Hole Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
55HX-2
more info
Description:400 W GaN on SiC HEMT from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 2.7 GHz
Power:
56.02 dBm (P3dB)
Package Type:
Flanged
Power(W):
400 W (P3dB)
Gain:
15 dB
Supply Voltage:
48 V
more info

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