RF Transistors - Page 174

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 1.8 to 2.2 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 2.2 GHz
Power:
47.1 to 47.8 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
51.29 to 60.26 W
Supply Voltage:
28 to 32 V
more info
AFT27S006N Image
Description:Airfast RF Power LDMOS Transistor, 728-2700 MHz, 28.8 dBm Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
100 MHz to 3.6 GHz
Power:
28.8 dBm
Package Type:
Surface Mount
Power(W):
0.76 W
Supply Voltage:
28 V
Package:
PLD--1.5W PLASTIC
more info
Description:960 to 1215 MHz, 16.8 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Gain:
16.8 dB
Supply Voltage:
30 V
Package:
Ceramic
more info
Description:GaAs FET from 2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Power:
23 dBm
Package Type:
Flanged
Power(W):
0.19 W
Supply Voltage:
3 to 6 V
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
46.99 to 47.63 dBm
Package Type:
Die
Power(W):
57.94 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Broadcast
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Package Type:
Flanged
Gain:
13 dB
Supply Voltage:
15 V
Package:
Flange Ceramic
more info
Description:A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
54.77 dBm
Package Type:
Surface Mount
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
SOT502A
more info
A2T08VD020N Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 2 W Avg., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 960 MHz
Power:
33.01 dBm
Package Type:
Surface Mount
Power(W):
2 W
Supply Voltage:
48 V
Package:
PQFN 8 × 8 PLASTIC
more info
Description:200 W GaN Transistor from 2.7 to 3.1 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
14 dB
Supply Voltage:
46 V
Package:
Ceramic
more info
Description:GaAs FET from 3.7 to 4.2 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.7 to 4.2 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IK
more info

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