RF Transistors - Page 174

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:600 Watt LDMOS Power Transistor from 616 to 960 MHz
Application Industry:
Base Station, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
616 to 960 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
600 W
Supply Voltage:
47 to 50 V
Package:
SOT1250-2
more info
A2G22S160-01S Image
Description:AIRFAST RF Power GaN Transistor, 1800-2200 MHz, 32 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
48 V
Package:
NI--400S--2S
more info
Description:2700 to 3100 MHz, 9.2 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50.41 to 52.3 dBm
Package Type:
Flanged
Power(W):
169.82 W
Gain:
9.2 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 7.1 to 7.9 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.1 to 7.9 GHz
Power:
37.5 to 38.5 dBm
Package Type:
Flanged
Power(W):
5.62 to 7.08 W
Package:
IK
more info
Description:800 W, GaN Transistor from 1025 to 1150 MHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1025 to 1150 MHz
Power:
59.03 dBm
Package Type:
Ceramic
Power(W):
800 W
Supply Voltage:
54 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
30 to 200 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
9 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
BLP05H6250XR Image
Description:10 to 600 MHz, 53.98 dBm, LDMOS Transistor
Application Industry:
Aerospace & Defence, ISM, RF Energy, Wireless Infr...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 600 MHz
Power:
58.45 dBm
Package Type:
Surface Mount
Power(W):
699.84 W
Supply Voltage:
50 V
Package:
SOT1138-2
more info
AFT31150N Image
Description:150 Watts Pulsed LDMOS Transistor from 2700 to 3100 MHz
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
51.8 dBm
Package Type:
Flanged
Power(W):
151.36 W
Supply Voltage:
32 V
Package:
OM--780--2L PLASTIC
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
40 to 42.3 dBm
Package Type:
Flanged
Power(W):
16.98 W
Gain:
15 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaAs HEMT from 4 GHz
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
4 GHz
Package Type:
Surface Mount
Gain:
14 to 15.5 dB
Supply Voltage:
2 V
Package:
LG
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Apply

Package Type