RF Transistors - Page 172

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:0.5 Watts, 20 Volts, Class A Linear to 2300 MHz
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 2.3 GHz
Power:
26.9 to 28.4 dBm
Package Type:
2-Hole Flanged
Power(W):
0.49 W
Supply Voltage:
20 V
Package:
55BT-2
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
8.5 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:2 kW LDMOS Power Transistor from 1.8 to 400 MHz
Application Industry:
Radar, Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 400 MHz
Power:
63.01 dBm
Package Type:
Flanged
Power(W):
2 kW
Supply Voltage:
65 V
more info
MMRF1008GH Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 275 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
44.39 dBm
Package Type:
Flanged
Power(W):
27.48 W
Supply Voltage:
50 V
Package:
NI--780GH--2L
more info
Description:1025 to 1150 MHz, 10 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.150 GHz
Power:
59.03 to 60.54 dBm
Package Type:
Flanged
Power(W):
1132.4 W
Gain:
10 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 9.5 to 10.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
9.5 to 10.5 GHz
Power:
35.5 to 36 dBm
Package Type:
Flanged
Power(W):
3.55 to 3.98 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 65 MHz
Power:
51.76 dBm
Package Type:
Die
Power(W):
149.97 W
Supply Voltage:
250 V
Package:
TO-247CS
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.9 to 3.1 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
8.2 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
53.98 dBm
Package Type:
Surface Mount
Power(W):
250.03 W
Supply Voltage:
28 V
Package:
SOT539B
more info
Description:Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V
Application Industry:
Aerospace & Defence, ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270--2 PLASTIC
more info

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