RF Transistors - Page 172

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS
Application Industry:
Aerospace & Defence, Commercial
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
28 V
Package:
M168
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:300 W LDMOS Power Transistor from 2400 MHz to 2500 MHz
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.4 to 2.5 GHz
Power:
54.7 dBm
Package Type:
Surface Mount
Power(W):
295.12 W
Supply Voltage:
32 V
Package:
SOT1250-1
more info
MMRF1308HSR5 Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info
Description:2700 to 2900 MHz, 9.8 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Gain:
9.8 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 5.0 to 5.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.0 to 5.3 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IK
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 60 MHz
Power:
51.76 dBm
Package Type:
Die
Power(W):
149.97 W
Supply Voltage:
300 V
Package:
TO-247CS
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
6 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:250 W LDMOS Power Transistor for 2.4 GHz RF Energy Applications
Application Industry:
Commercial, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2400 to 2500 MHz
Power:
54 dBm
Package Type:
Flanged
Power(W):
250 W
Gain:
13.2 to 14.4 dB
Supply Voltage:
32 V
more info
MRF6VP11KH Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 1.8-150 MHz, 1000 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 150 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
CASE 375D--05 STYLE 1 NI--1230--4
more info

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