RF Transistors - Page 173

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:2900 to 3400 MHz, 7.9 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.9 to 3.4 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
7.9 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
23 to 24 dBm
Package Type:
Flanged
Power(W):
0.2 to 0.25 W
Package:
WG
more info
Description:15 Watts, 50 Volts, 4.5mS, 35% 1200 to 1400MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
41.76 to 42.79 dBm
Package Type:
Die
Power(W):
19.01 W
Supply Voltage:
50 V
Package:
55-78030
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
58.45 dBm
Package Type:
Flanged
Power(W):
699.84 W
Gain:
7.5 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 600 MHz
Power:
58.45 to 58.75 dBm
Package Type:
Surface Mount
Power(W):
749.89 W
Supply Voltage:
50 V
Package:
SOT1214C
more info
MMRF1305HS Image
Description:Broadband RF Power LDMOS Transistor, 1.8-2000 MHz, 100 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Supply Voltage:
50 V
Package:
NI--780S--4L
more info
Description:1.030 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 5.2 to 5.4 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.4 GHz
Power:
44 to 45.5 dBm
Package Type:
Flanged
Power(W):
25.12 to 35.48 W
Gain:
15 to 16.5 dB
Supply Voltage:
24 V
more info
Description:RF & MICROWAVE TRANSISTORS FM MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
118 to 136 MHz
Power:
43.01 dBm
Package Type:
Screw Mount, Flanged
Power(W):
20 W
Supply Voltage:
12.5 V
Package:
M135
more info
Description:20 MHz to 1 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Test...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
20 MHz to 1 GHz
Power:
40.97 dBm
Package Type:
Surface Mount
Power(W):
12.5 W
Gain:
12.5 to 14 dB
Supply Voltage:
28 V
Package:
6x5mm 8-lead PDFN
more info

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