RF Transistors - Page 173

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:2700 to 3100 MHz, 15 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
13.5 dB
Supply Voltage:
44 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 900 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
900 MHz
Power:
551 dBm
Package Type:
Flanged
Power(W):
100 to 125.89 W
Gain:
18 to 20 dB
Supply Voltage:
50 V
more info
Description:RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
48.75 dBm
Package Type:
2-Hole Flanged
Power(W):
74.99 W
Supply Voltage:
12.5 V
Package:
M174
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.025 to 1.15 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
8.5 to 9 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:56.02 dBm (400 W), LDMOS Transistor from 1800 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
56.02 dBm
Package Type:
Surface Mount
Power(W):
399.94 W
Supply Voltage:
32 V
Package:
SOT1258-3
more info
MRF1518N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 12.5 V
Application Industry:
Wireless Infrastructure, Commercial, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
12.5 V
Package:
CASE 466-03, STYLE 1 PLD-1.5
more info
Description:1030 MHz, 12.3 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
52.79 to 54.27 dBm
Package Type:
Flanged
Power(W):
267.3 W
Gain:
12.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
Supply Voltage:
10 V
Package:
IK
more info
Description:170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
52.3 dBm
Package Type:
Flanged
Power(W):
169.82 W
Supply Voltage:
38 V
Package:
55KS-1
more info
Description:170 W GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
52.3 dBm (P3dB), 52.55 dBm (CW)
Package Type:
Earless Flanged
Power(W):
170 W (P3dB), 180 W (CW)
Gain:
15 to 16.8 dB
Supply Voltage:
0 to 50 V
more info

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