RF Transistors - Page 176

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 4.4 to 5.0 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
4.4 to 5.0 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IB
more info
Description:100 Watts Pk, 28 Volt, Class AB UHF Television - Band IV & V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
470 to 860 MHz
Power:
50 dBm
Package Type:
2-Hole Flanged
Power(W):
100 W
Supply Voltage:
28 V
Package:
55RT-2
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Gain:
9.4 dB
Supply Voltage:
65 V
Package:
Flange Ceramic
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 2300 to 2400 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.3 to 2.4 GHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
28 V
Package:
SOT539B
more info
AFT09MS031GN Image
Description:Airfast Wideband RF Power LDMOS Transistor, 764-941 MHz, 31 W, 13.6 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 941 MHz
Power:
44.91 dBm
Package Type:
Flanged
Power(W):
30.97 W
Supply Voltage:
13.6 V
Package:
TO--270--2 GULL PLASTIC
more info
Description:2200 to 2260 MHz, 8.4 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.25 to 2.55 GHz
Power:
49.03 dBm
Package Type:
Flanged
Power(W):
79.98 W
Gain:
8.4 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 2.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2.6 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Package:
IB
more info
Description:RF POWER MOSFET N- CHANNEL PUSH - PULL PAIR
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 150 MHz
Power:
56.53 dBm
Package Type:
Flanged
Power(W):
449.78 W
Supply Voltage:
165 V
Package:
T3A
more info
Description:Radar Pulsed Power Transistor
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
55.8 dBm
Package Type:
Flanged
Power(W):
380.19 W
Gain:
8.8 dB
Supply Voltage:
44 V
Package:
Flange Ceramic
more info

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