RF Transistors - Page 176

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:960 to 1215 MHz, 10.3 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
53.01 to 54.52 dBm
Package Type:
Flanged
Power(W):
283.14 W
Gain:
10.3 dB
Supply Voltage:
44 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 1.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1.6 GHz
Power:
47.5 dBm
Package Type:
Flanged
Power(W):
56.23 W
Supply Voltage:
50 V
more info
Description:RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
450 to 512 MHz
Power:
33.01 to 36.02 dBm
Package Type:
Through Hole
Power(W):
4 W
Supply Voltage:
12.5 V
Package:
TO-39
more info
Description:500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
56.75 to 57.99 dBm
Package Type:
Flanged
Power(W):
629.51 W
Supply Voltage:
50 V
more info
Description:36.99 dBm (5 W), LDMOS Transistor from 10 to 2500 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
10 MHz to 2.5 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Supply Voltage:
28 V
Package:
SOT1179-2
more info
MMRF1304GNR1 Image
Description:Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 MHz to 2 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270G--2 PLASTIC
more info
Description:5200 to 5900 MHz, 15 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
31.76 dBm
Package Type:
Flanged
Power(W):
1.5 W
Gain:
15.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 900 MHz
Application Industry:
Cellular, Wireless Infrastructure, Wireless Commun...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
900 MHz
Power:
48 dBm
Package Type:
Flanged
Power(W):
63.1 W
Supply Voltage:
50 V
more info
Description:RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
44.77 dBm
Package Type:
Screw Mount, Flanged
Power(W):
29.99 W
Supply Voltage:
12.5 V
Package:
M135
more info
Description:240-W, 3100 to 3500-MHz, 50-ohm Input/Output-Matched, GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
52.55 to 53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Supply Voltage:
50 V
more info

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