RF Transistors - Page 177

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:1.805 to 1.995 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
50.7 dBm
Package Type:
Surface Mount
Power(W):
117.49 W
Supply Voltage:
28 V
Package:
SOT1271-2
more info
MRF8P9040N Image
Description:CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 960 MHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 V
Package:
CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC
more info
Description:960 MHz to 1.22 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.22 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
15 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 13.75 to 14.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
13.75 to 14.5 GHz
Power:
38.5 to 39 dBm
Package Type:
Flanged
Power(W):
7.08 to 7.94 W
more info
Description:RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
Application Industry:
ISM, Commercial
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
DC to 45 MHz
Power:
54.77 dBm
Package Type:
Die
Power(W):
299.92 W
Supply Voltage:
200 V
Package:
TO-247 [L]
more info
Description:300 W, GaN on SiC HEMT from 2110 to 2200 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.11 to 2.2 GHz
Power:
47.5 dBm (Avg), 54.77 dBm (P3dB)
Package Type:
Earless Flanged
Power(W):
56.2 W (Avg), 300 W (P3dB)
Gain:
17.5 to 19 dB
Supply Voltage:
0 to 50 V
Package:
H-87265J-2
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1200 to 1400 MHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
52.79 to 54.62 dBm
Package Type:
Surface Mount
Power(W):
289.73 W
Supply Voltage:
45 V
Package:
SOM039
more info
MMRF5014H Image
Description:WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 292196 MHz, 125 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2.7 GHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Supply Voltage:
50 V
Package:
NI--360H--2SB
more info
Description:L-Band Radar Transistor from 1.03 to 1.09 GHz
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
0 to 50.79 dBm
Package Type:
Flanged
Power(W):
120 W
Gain:
20 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 3.4 to 3.9 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.4 to 3.9 GHz
Power:
35.5 to 36.5 dBm
Package Type:
Flanged
Power(W):
3.55 to 4.47 W
Package:
IB
more info

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