RF Transistors - Page 175

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:25 W, GaN on SiC Transistor from 1000 to 14000 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1000 to 14000 MHz
Power:
43.97 dBm
Package Type:
Die
Power(W):
25 W
Supply Voltage:
28 V
more info
Description:15-W, 28-V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
VHF to 3 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
50 V
more info
Description:30 W LDMOS Power Transistor from 400 to 860 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
400 to 860 MHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
30 Watt
Gain:
18.5 to 20.2 dB
Package:
plastic
more info
AFT27S010N Image
Description:Airfast RF Power LDMOS Transistor, 728-2700 MHz, 1.26 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
100 MHz to 3.6 GHz
Power:
31 to 31 dBm
Package Type:
Surface Mount
Power(W):
1.26 W
Supply Voltage:
28 V
Package:
PLD--1.5W PLASTIC
more info
Description:2900 to 3300 MHz, 11 dB LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.9 to 3.3 GHz
Power:
41.14 dBm
Package Type:
Flanged
Power(W):
13 W
Gain:
11 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 900 MHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
900 MHz
Power:
48.5 to 49.5 dBm
Package Type:
Flanged
Power(W):
70.79 to 89.1 W
Gain:
19 to 21 dB
Supply Voltage:
50 V
more info
Description:RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
41.76 dBm
Package Type:
Screw Mount, Flanged
Power(W):
15 W
Supply Voltage:
12.5 V
Package:
M122
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:700 W GaN HEMT from 0.9 to 1.4 GHz for Avionics Application
Application Industry:
Avionics, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
0.9 to 1.4 GHz
Power:
58.6 to 59.03 dBm
Package Type:
2-Hole Flanged
Power(W):
725 to 800 W
Supply Voltage:
50 V
more info
MRFE6VS25N Image
Description:25 W LDMOS Transistor from 1.8 to 2000 MHz
Application Industry:
Aerospace & Defence, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2000 MHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
50 V
Package:
TO--270--2 PLASTIC
more info

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