RF Transistors - Page 179

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:2700 to 2900 MHz, 9.5 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
52.3 to 53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Gain:
9.5 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaAs FET from 2 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2 GHz
Power:
34.5 to 35.5 dBm
Package Type:
Surface Mount
Power(W):
2.82 to 3.55 W
Supply Voltage:
10 V
Package:
ZM
more info
Description:280 Watts, 50 Volts, 200 us, 20% S-Band Radar 2700 - 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
54.47 to 55.25 dBm
Package Type:
Die
Power(W):
334.97 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:Si Based TMOS Transistor
Application Industry:
Broadcast, Aerospace & Defence, Radar, ISM, Commer...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 175 MHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:450 W CW/Pulsed LDMOS Power Transistor from 1 to 650 MHz
Application Industry:
Broadcast, ISM, Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1 to 650 MHz
Power:
54.77 to 56.63 dBm
Package Type:
Flanged
Power(W):
300 to 450 W
Supply Voltage:
50 to 65 V
more info
MRF6V2300N Image
Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 600 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC
more info
Description:1200 to 1400 MHz, 14.5 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 to 58.45 dBm
Package Type:
Flanged
Power(W):
699.84 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 2.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
2.6 GHz
Power:
41.5 to 42.5 dBm
Package Type:
Flanged
Power(W):
14.13 to 17.78 W
Package:
IB
more info
Description:120 W DME/L-Band Radar Driver GaN Power Transistor
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.4 to 1.6 GHz
Power:
50.79 to 51.14 dBm
Package Type:
Die
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 500 MHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Gain:
13.5 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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