RF Transistors - Page 179

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:1030 MHz, 14.5 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
41.76 to 43.28 dBm
Package Type:
Flanged
Power(W):
21.28 W
Gain:
14.5 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description:GaAs FET from 12.7 to 13.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
12.7 to 13.2 GHz
Power:
35.5 to 36 dBm
Package Type:
Flanged
Power(W):
3.55 to 3.98 W
more info
Description:550 Watts - 50 Volts, 300 us, 10% Broad Band 1200 - 1400 MHz\
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
57.4 dBm
Package Type:
Die
Power(W):
549.54 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
40 dBm
Package Type:
Flanged
Power(W):
10 W
Gain:
10 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:Dual-Stage 250 W LDMOS RF Power Module for 2.4 GHz ISM Applications
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2400 to 2500 MHz
Power:
53.98 dBm
Package Type:
Through Hole
Power(W):
250 W
Gain:
31 to 32 dB
Supply Voltage:
32 V
Package:
Pallet
more info
A2T26H165-24S Image
Description:Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 32 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L2L
more info
Description:960 to 1215 MHz, 9.1 dB LDMOS Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.02 to 57.99 dBm
Package Type:
Flanged
Power(W):
629.51 W
Gain:
9.1 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 3.1 to 3.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
56.81 to 57.56 dBm
Package Type:
Flanged
Power(W):
480 to 570 W
Supply Voltage:
50 V
more info
Description:30 Watts, 50 Volts, 128µs, 10% 1030-1090MHz
Application Industry:
Aerospace & Defence, Radar, Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
44.77 to 45.44 dBm
Package Type:
Die
Power(W):
34.99 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:2.9 to 3.3 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.9 to 3.3 GHz
Power:
44.77 dBm
Package Type:
Surface Mount
Power(W):
29.99 W
Gain:
20.5 dB
Supply Voltage:
32 V
Package:
PQFN-28
more info

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