RF Transistors - Page 178

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:15 W, GaN Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
41.76 dBm
Package Type:
Ceramic
Power(W):
15 W
Supply Voltage:
50 V
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 80 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
599.79 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:1.8 to 2 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
46.5 dBm
Package Type:
Surface Mount
Power(W):
44.67 W
Supply Voltage:
28 V
Package:
SOT608B
more info
MMRF1316N Image
Description:WIDEBAND RF POWER LDMOS TRANSISTOR, 1.8--600 MHz, 300 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 600 MHz
Power:
54.77 dBm
Package Type:
Flanged
Power(W):
299.92 W
Supply Voltage:
50 V
Package:
TO--270WB--4 PLASTIC
more info
Description:960 to 1215 MHz, 11.6 dB Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
48.45 to 50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
11.6 dB
Supply Voltage:
44 V
Package:
Ceramic
more info
Description:GaAs FET from 6.4 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
6.4 to 7.2 GHz
Power:
35 to 36 dBm
Package Type:
Surface Mount
Power(W):
3.16 to 3.98 W
Supply Voltage:
10 V
Package:
IB
more info
Description:750 Watts - 50 Volts, ELM L-Band Avionics 1030 - 1090 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.03 to 1.09 GHz
Power:
58.75 to 59.03 dBm
Package Type:
Flanged
Power(W):
799.83 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 400 MHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
11 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:57.78 dBm (600 W), LDMOS Transistor from 400 to 1000 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
400 MHz to 1 GHz
Power:
57.78 dBm
Package Type:
Surface Mount
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
SOT539A
more info
A3G35H100-04S Image
Description:3400 to 3600 MHz, 14 W AVG., 48 V, AIRFAST RF Power GaN Transistor
Application Industry:
Wireless Infrastructure
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3.4 to 3.6 GHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Supply Voltage:
48 Vdc
more info

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