RF Transistors - Page 180

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:40 dBm (10 W), LDMOS Transistor from 1 to 2200 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2.2 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT538A
more info
A3T18H400W23S Image
Description:71 W RF Power LDMOS Transistor from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
48.51 dBm
Package Type:
Chip
Power(W):
71 W
Gain:
16.8 to 17 dB
Supply Voltage:
28 V
more info
Description:1200 to 1400 MHz, 19 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
47.78 to 50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.7 to 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
56.81 to 57.4 dBm
Package Type:
Flanged
Power(W):
480 to 550 W
Supply Voltage:
50 V
more info
Description:6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1 to 1.4 GHz
Power:
37.78 dBm
Package Type:
2-Hole Flanged
Power(W):
6 W
Supply Voltage:
28 V
Package:
55LV-1
more info
Description:3.1 to 3.5 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
3.1 to 3.5 GHz
Power:
49.29 dBm
Package Type:
Surface Mount
Power(W):
84.92 W
Gain:
25 dB
Supply Voltage:
50 V
more info
C5H3337N110D Image
Description:Gan Wideband Doherty Power Transistor from 3.3 to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
GaN
Frequency:
3.3 to 3.7 GHz
Power:
55.05 dBm
Package Type:
Surface Mount
Power(W):
320 W
Gain:
14 dB
Package:
QFN
more info
AFT09S200W02N Image
Description:Airfast RF Power LDMOS Transistor, 716-960 MHz, 41 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
716 to 960 MHz
Power:
47.48 dBm
Package Type:
Flanged
Power(W):
55.98 W
Supply Voltage:
28 V
Package:
OM--780--2L PLASTIC
more info
Description:2700 to 3100 MHz, 9.2 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50.41 to 52.3 dBm
Package Type:
Flanged
Power(W):
169.82 W
Gain:
9.2 dB
Supply Voltage:
36 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
Communication, SATCOM, Broadcast, Wireless Infrast...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
47 to 48 dBm
Package Type:
Flanged
Power(W):
50.12 to 63.1 W
Supply Voltage:
24 V
more info

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