RF Transistors - Page 180

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:2-Stage LDMOS Doherty MMIC from 1800 to 2200 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1.8 to 2.2 GHz
Power:
48.4 dBm
Package Type:
Surface Mount
Power(W):
69.18 W
Supply Voltage:
28 V
more info
MMRF1013HS Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
54.19 dBm
Package Type:
Flanged
Power(W):
262.42 W
Supply Voltage:
30 V
Package:
NI--1230S--4S
more info
IGN1030S3100 Image
Description:3.1 kW, GaN RF Transistor from 1 to 2 GHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1 to 2 GHz
Power:
64.91 dBm
Package Type:
2-Hole Flanged
Power(W):
3.1 kW
Supply Voltage:
75 V
more info
Description:GaAs FET from 5.9 to 7.2 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 7.2 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IB
more info
Description:50 W, GaN on SiC Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
960 to 1215 MHz
Power:
46.98 dBm
Package Type:
Ceramic
Power(W):
50 W
Supply Voltage:
50 V
more info
Description:3.1 to 3.5 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
3.1 to 3.5 GHz
Power:
49.29 dBm
Package Type:
Surface Mount
Power(W):
84.92 W
Gain:
25 dB
Supply Voltage:
50 V
more info
Description:30 W GaN CW/Pulsed Transistor from DC to 6 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
30 W
Gain:
15.5 to 17 dB
more info
MW7IC2425NB Image
Description:Lateral N-Channel RF Power MOSFET, 2450 MHz, 25 W CW, 28 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
Package:
CASE 1329-09 TO-272 WB-16 PLASTIC
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
44.77 to 46.43 dBm
Package Type:
Flanged
Power(W):
43.95 W
Gain:
16.4 dB
Supply Voltage:
42 V
Package:
Ceramic
more info
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
42 dBm
Package Type:
Flanged
Power(W):
15.85 W
Supply Voltage:
50 V
more info

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