RF Transistors - Page 209

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:8 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
39.3 dBm
Package Type:
Die
Power(W):
8.51 W
Supply Voltage:
28 V
more info
Description:600 Watt LDMOS Power Transistor from 616 to 960 MHz
Application Industry:
Base Station, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
616 to 960 MHz
Power:
57.78 dBm
Package Type:
Flanged
Power(W):
600 W
Supply Voltage:
47 to 50 V
Package:
SOT1250-2
more info
MMRF1006H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 to 500 MHz
Power:
53.01 dBm
Package Type:
Flanged
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
NI--1230H--4S
more info
Description:150 W GaN-on-SiC Power Transistor from 3.3 to 3.8 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3300 to 3800 MHz
Power:
51.76 dBm
Package Type:
2-Hole Flanged
Power(W):
150 W
Gain:
7.5 to 13 dB
Supply Voltage:
28 V
Package:
Epoxy-sealed ceramic lid
more info
Description:GaN from 9.8 to 10.5 GHz
Application Industry:
Radar, Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
9.8 to 10.5 GHz
Power:
53.42 to 53.98 dBm
Package Type:
Surface Mount
Power(W):
220 to 250 W
Gain:
7.4 to 8 dB
more info
Description:120 W GaN HEMT from DC to 8 GHz
Application Industry:
Broadcast, Test & Measurement, Wireless Infrastruc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 8 GHz
Power:
50.8 dBm
Package Type:
Die
Power(W):
120.23 W
Supply Voltage:
28 V
more info
BLP8G27-5 Image
Description:36.99 dBm (5 W), LDMOS Transistor from 700 to 2700 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
700 MHz to 2.7 GHz
Power:
36.98 dBm
Package Type:
Surface Mount
Power(W):
4.99 W
Supply Voltage:
28 V
Package:
SOT1371-1
more info
A2V09H400-04N Image
Description:Airfast RF Power LDMOS Transistor, 720-960 MHz, 107 W Avg., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
720 to 960 MHz
Power:
50.29 dBm
Package Type:
Flanged
Power(W):
106.91 W
Supply Voltage:
48 V
Package:
OM--780--4L PLASTIC
more info
Description:1200 to 1400 MHz, 8.81 dB Bipolar Transistor
Application Industry:
Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
51.14 to 54.15 dBm
Package Type:
Flanged
Power(W):
260.02 W
Gain:
8.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaAs FET from 8.5 to 9.6 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
8.5 to 9.6 GHz
Power:
38.5 to 39 dBm
Package Type:
Flanged
Power(W):
7.08 to 7.94 W
Package:
IA
more info

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