RF Transistors - Page 211

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC, GaN HEMT from 8.5 to 9.8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
8.5 to 9.8 GHz
Power:
551 dBm
Package Type:
Flanged
Power(W):
100 to 125.89 W
Supply Voltage:
50 V
more info
Description:8 W GaN HEMT from DC to 15 GHz
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 15 GHz
Power:
39 dBm
Package Type:
Surface Mount
Power(W):
8 W
Gain:
15 to 17 dB
Supply Voltage:
40 V
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 2600 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.6 to 2.7 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
32 V
Package:
SOT1120B
more info
MRFE6VP8600HS Image
Description:LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Supply Voltage:
50 V
Package:
CASE 375E--04, STYLE 1 NI--1230S
more info
Description:GaAs FET from 5.0 to 5.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.0 to 5.3 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IK
more info
Description:30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
VHF to 3 GHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
50 V
more info
Description:53.8 dBm (240 W), LDMOS Transistor from 1805 to 1995 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
53.8 dBm
Package Type:
Surface Mount
Power(W):
239.88 W
Supply Voltage:
28 V
Package:
SOT1275-1
more info
A2T18H455W23N Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 1805-1880 MHz, 87 W AVG., 31.5 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
49.4 dBm
Package Type:
Flanged
Power(W):
87.1 W
Supply Voltage:
31.5 V
Package:
OM--1230--4L2S PLASTIC
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
38 to 39 dBm
Package Type:
Surface Mount
Power(W):
6.31 to 7.94 W
Supply Voltage:
10 V
Package:
IK
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 400 MHz
Power:
44.77 dBm
Package Type:
Flanged
Power(W):
29.99 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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