RF Transistors - Page 211

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 10.7 to 11.7 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
10.7 to 11.7 GHz
Power:
34 to 35 dBm
Package Type:
Flanged
Power(W):
2.51 to 3.16 W
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Gain:
7.6 to 8.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:36.99 dBm (5 W), LDMOS Transistor from 10 to 1400 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 MHz to 1.4 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Supply Voltage:
50 V
Package:
SOT1352-1
more info
MRFE6S9060N Image
Description:Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
Application Industry:
Wireless Infrastructure, Commercial, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 960 MHz
Power:
41.46 dBm
Package Type:
Flanged
Power(W):
14 W
Supply Voltage:
28 V
Package:
CASE 1265-09, STYLE 1 TO-270-2 PLASTIC
more info
Description:GaAs FET from 14.5 to 15.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 to 15.3 GHz
Power:
38 to 39 dBm
Package Type:
Flanged
Power(W):
6.31 to 7.94 W
Supply Voltage:
10 V
more info
Description:35 W, 9 to 11 GHz GaN MMIC HEMT for Radar & CW Applications
Application Industry:
Radar, ISM, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
9 to 11 GHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
35 W
Supply Voltage:
28 V
more info
Description:1200 W LDMOS Power Transistor for Avionics Applications
Application Industry:
Aerospace & Defence, Avionics, Wireless Infrastruc...
Transistor Type:
LDMOS
Technology:
Si
Frequency:
960 to 1215 MHz
Power:
60.79 dBm
Package Type:
Flanged
Power(W):
1200 W
Gain:
19 dB
Supply Voltage:
50 V
more info
MMRF1022HS Image
Description:Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 63 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.11 to 2.17 GHz
Power:
47.99 dBm
Package Type:
Flanged
Power(W):
62.95 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info
Description:GaAs FET from 7.7 to 8.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
7.7 to 8.5 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
Supply Voltage:
10 V
Package:
M2A
more info
Description:700 W High Power RF LDMOS FET from 1.2 to 1.4 GHz
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1200 to 1400 MHz
Power:
58.45 dBm
Package Type:
Flanged
Power(W):
700 W
Gain:
15.5 to 16 dB
Supply Voltage:
50 V
more info

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