RF Transistors - Page 213

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC, GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM, Broadcast, Communication, Wireless Infrast...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44 to 45 dBm
Package Type:
Flanged
Power(W):
25.12 to 31.62 W
Supply Voltage:
24 V
more info
Description:100-W, 1800 to 2200-MHz, GaN HEMT for LTE
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.8 to 2.2 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:40 dBm (10 W), LDMOS Transistor from 2300 to 2700 MHz
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.7 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 V
Package:
SOT975C
more info
AFT09MS007N Image
Description:Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1.8 to 941 MHz
Power:
38.45 dBm
Package Type:
Surface Mount
Power(W):
7 W
Supply Voltage:
7.5 V
Package:
PLD--1.5W
more info
Description:GaAs FET from 14.5 to 15.3 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 to 15.3 GHz
Power:
36 to 37 dBm
Package Type:
Flanged
Power(W):
3.98 to 5.01 W
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
3.1 to 3.4 GHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Gain:
7.5 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:52.3 dBm (170 W), LDMOS Transistor from 1800 to 1990 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.88 to 1.99 GHz
Power:
52.3 dBm
Package Type:
Surface Mount
Power(W):
169.82 W
Supply Voltage:
32 V
Package:
SOT1120B
more info
MRF6VP2600H Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 2-500 MHz, 600 W, 50 V
Application Industry:
ISM, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2 to 500 MHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
28.5 to 30 dBm
Package Type:
Flanged
Power(W):
0.71 to 1 W
Package:
WG
more info
Description:2.1 to 2.7 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.7 GHz
Power:
49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Gain:
16 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info

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