RF Transistors - Page 213

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs FET from 8 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
8 GHz
Power:
28.5 to 30 dBm
Package Type:
Flanged
Power(W):
0.71 to 1 W
Package:
WG
more info
Description:Si Based TMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
5 to 400 MHz
Power:
36.99 dBm
Package Type:
Flanged
Power(W):
5 W
Gain:
11 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:52.04 dBm (160 W), LDMOS Transistor from 1800 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
52.04 dBm
Package Type:
Surface Mount
Power(W):
159.96 W
Supply Voltage:
28 V
Package:
SOT1239B
more info
MRF6V12500H Image
Description:Pulsed Lateral N-Channel RF Power MOSFET, 960-1215 MHz, 500 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
NI--780H--2L
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
14 dBm
Package Type:
Chip
Power(W):
0 to 0.03 W
Gain:
9.5 to 10.5 dB
Supply Voltage:
2 V
Package:
LG
more info
Description:800 W RF LDMOS Transistor from 730 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
730 to 960 MHz
Power:
59.03 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
800 W (P3dB)
Gain:
17.3 to 19 dB
Supply Voltage:
48 V
more info
Description:3.4 to 3.8 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.8 GHz
Power:
43.97 dBm
Package Type:
Surface Mount
Power(W):
24.95 W
Supply Voltage:
28 V
Package:
SOT608B
more info
A2G35S160-01S Image
Description:Airfast RF Power GaN Transistor, 3400-3800 MHz, 32 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.4 to 3.6 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
48 V
Package:
NI--400S--2S
more info
Description:GaN on SiC, GaN HEMT from 2.1 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.1 GHz
Power:
47.5 dBm
Package Type:
Flanged
Power(W):
56.23 W
Supply Voltage:
50 V
more info
Description:Thermally-Enhanced High Power RF GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
54.77 dBm (P3dB)
Package Type:
Flanged
Power(W):
300 W (P3dB)
Gain:
16 to 18 dB
Supply Voltage:
48 V
more info

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