RF Transistors - Page 214

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:LDMOS Transistor from 2700 to 3100 MHz for Radar Applications
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
56.28 dBm
Package Type:
Flanged
Power(W):
425 W
Gain:
13 dB
Supply Voltage:
32 V
more info
AFT23H201-24S Image
Description:AIRFAST RF POWER LDMOS TRANSISTOR 2300-2400 MHz, 45 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.3 to 2.4 GHz
Power:
46.53 dBm
Package Type:
Flanged
Power(W):
44.98 W
Supply Voltage:
28 V
Package:
ACP--1230S--4L2L
more info
Description:GaN on SiC, GaN HEMT from 3.1 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
3.1 GHz
Power:
44 to 46 dBm
Package Type:
Flanged
Power(W):
25.12 to 39.81 W
Gain:
13 to 15 dB
Supply Voltage:
50 V
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Radar
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
33.01 dBm
Package Type:
Flanged
Power(W):
2 W
Gain:
7 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:10 MHz to 1 GHz, Power LDMOS transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
10 MHz to 1 GHz
Power:
49.54 dBm
Package Type:
Surface Mount
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
SOT1224-2
more info
MRFE6VP8600H Image
Description:LDMOS Broadband RF Power Transistor, 470-860 MHz, 600 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 to 860 MHz
Power:
50.97 dBm
Package Type:
Flanged
Power(W):
125.03 W
Supply Voltage:
50 V
Package:
CASE 375D--05, STYLE 1 NI--1230
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Package:
IK
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, ISM, Broadcast
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
CW
Frequency:
1.6 to 1.64 GHz
Power:
37.78 dBm
Package Type:
Flanged
Power(W):
6 W
Gain:
7.4 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:51.14 dBm (130 W), LDMOS Transistor from 500 to 1400 MHz
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
500 MHz to 1.4 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT1135B
more info
A2I20H060GN Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
40.79 dBm
Package Type:
Flanged
Power(W):
11.99 W
Supply Voltage:
28 V
Package:
TO--270WBG--15 PLASTIC
more info

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