RF Transistors - Page 214

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:500 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2 GHz
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
1800 to 2000 MHz
Power:
57 dBm
Package Type:
Flanged
Power(W):
500 W
more info
A2T18H100-25S Image
Description:Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
42.55 dBm
Package Type:
Flanged
Power(W):
17.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L4S
more info
Description:GaAs FET from 3.1 to 3.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.1 to 3.5 GHz
Power:
40.5 to 41.5 dBm
Package Type:
Flanged
Power(W):
11.22 to 14.13 W
Package:
IK
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
47.78 dBm
Package Type:
Flanged
Power(W):
59.98 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 2600 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.6 to 2.7 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
32 V
Package:
SOT1120B
more info
A5G23H110N Image
Description:13.8 W Doherty GaN Power Transistor from 2.3 to 2.4 GHz for 5G Base Stations
Application Industry:
Wireless Infrastructure
Technology:
GaN
CW/Pulse:
CW
Frequency:
2.3 to 2.4 GHz
Power:
41.4 dBm
Package Type:
Surface Mount
Power(W):
13.8 W
Supply Voltage:
48 V
Package:
DFN
more info
Description:GaAs FET from 5.85 to 6.75 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.85 to 6.75 GHz
Power:
42.5 dBm
Package Type:
Flanged
Power(W):
17.78 W
Package:
IB
more info
Description:30 W, GaN HEMT from DC to 6 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure, Broad...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Package Type:
Die
Power(W):
29.99 W
Supply Voltage:
28 V
more info
Description:LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.7 to 4 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
3.7 to 4 GHz
Power:
44.7 to 45.2 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
29.51 to 33.11 W
Supply Voltage:
28 V
more info
A2T18H160-24S Image
Description:Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
44.47 dBm
Package Type:
Flanged
Power(W):
27.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L2L
more info

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