RF Transistors - Page 210

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:460 W GaN Power Amplifier from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
1805 to 1880 MHz
Power:
52.04 to 56.63 dBm (P3dB)
Package Type:
Flanged
Power(W):
160 to 460 W (P3dB)
Gain:
14 to 15.5 dB
Supply Voltage:
48 V
Package:
H-37248C-4
more info
Description:50 dBm (100 W), LDMOS Transistor from 1 to 1000 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 1 GHz
Power:
50 dBm
Package Type:
Surface Mount
Power(W):
100 W
Supply Voltage:
40 V
Package:
SOT467C
more info
MMRF1011HS Image
Description:Pulse Lateral N-Channel RF Power MOSFET, 1400 MHz, 330 W, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
45.98 to 45.98 dBm
Package Type:
Flanged
Power(W):
39.63 W
Supply Voltage:
50 V
Package:
NI--780S--2L
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Gain:
9 dB
Supply Voltage:
50 V
Package:
Flange Ceramic
more info
Description:900 to 930 MHz, Power LDMOS transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
900 to 930 MHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT502B
more info
MRF8P9040NR1 Image
Description:CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 to 960 MHz
Power:
36.02 dBm
Package Type:
Flanged
Power(W):
4 W
Supply Voltage:
28 V
Package:
CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC
more info
Description:GaAs FET from 14.5 GHz
Transistor Type:
FET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
31.5 to 32.5 dBm
Package Type:
Chip
Power(W):
1.41 to 1.78 W
more info
Description:Si Based Bipolar Transistor
Application Industry:
Aerospace & Defence, Radar, ISM
Transistor Type:
Bipolar
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
52.3 dBm
Package Type:
Flanged
Power(W):
169.82 W
Gain:
9 dB
Supply Voltage:
36 V
Package:
Flange Ceramic
more info
Description:53.98 dBm (250 W), LDMOS Transistor from 1300 to 1300 MHz
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Power:
53.97 dBm
Package Type:
Surface Mount
Power(W):
249.46 W
Supply Voltage:
50 V
Package:
SOT1121B
more info
A3G26H501W17S Image
Description:56 W Doherty RF Power GaN Transistor from 2496 to 2960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
GaN on SiC, Si, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.496 to 2.69 GHz
Power:
57 dBm (P3dB)
Package Type:
Flanged
Power(W):
500 W ( P3dB)
Gain:
12.7 to 15.7 dB
Supply Voltage:
48 V
more info

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