RF Transistors - Page 212

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:1200 Watt LDMOS Power Transistor from 10 to 700 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
10 to 700 MHz
Power:
60.79 dBm
Package Type:
Ceramic
Power(W):
1200 W
more info
AFM906N Image
Description:Wideband Airfast RF Power LDMOS Transistor 136-941 MHz, 6 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 941 MHz
Power:
38.33 dBm
Package Type:
Surface Mount
Power(W):
6.81 W
Supply Voltage:
7.5 V
Package:
DFN 4 x 6
more info
Description:GaN on SiC, GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM, Communication, Wireless Infrastructure, Br...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
43 to 44 dBm
Package Type:
Flanged
Power(W):
19.95 to 25.12 W
Gain:
7 to 8 dB
Supply Voltage:
24 V
more info
Description:280 W GaN on SiC HEMT from 3.3 to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3400 to 3600 MHz
Power:
54.47 dBm
Package Type:
Earless Flanged
Power(W):
280 W
Gain:
15 dB
Supply Voltage:
55 V
more info
Description:53.01 dBm (200 W), LDMOS Transistor from 10 to 860 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 860 MHz
Power:
53.01 dBm
Package Type:
Surface Mount
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
SOT502A
more info
AFT09H310-03S Image
Description:Airfast RF Power LDMOS Transistor, 920-960 MHz, 56 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.48 dBm
Package Type:
Flanged
Power(W):
55.98 W
Supply Voltage:
28 V
Package:
NI-1230S-4S
more info
Description:GaAs FET from 3.4 to 3.9 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
3.4 to 3.9 GHz
Power:
441.5 dBm
Package Type:
Flanged
Power(W):
10 to 14.13 W
Package:
IB
more info
Description:240-W, 1800 to 2300-MHz, GaN HEMTfor WCDMA, LTE, WiMAX
Application Industry:
Wireless Infrastructure, Wireless Communication
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.8 to 2.3 GHz
Power:
53.32 dBm
Package Type:
Flanged
Power(W):
214.78 W
Supply Voltage:
50 V
more info
Description:900 to 930 MHz, Power LDMOS transistor
Application Industry:
ISM, RF Energy, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
900 to 930 MHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Supply Voltage:
50 V
Package:
SOT502B
more info
A2I25D012N Image
Description:Airfast RF Power LDMOS Transistor, 2300-2690 MHz, 1.3 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.1 to 2.9 GHz
Power:
33.42 dBm
Package Type:
Flanged
Power(W):
2.2 W
Supply Voltage:
28 V
Package:
TO--270WB--15 PLASTIC
more info

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