RF Transistors - Page 212

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:2.5 to 2.7 GHz, LDMOS Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
46.02 dBm
Package Type:
Surface Mount
Power(W):
39.99 W
Supply Voltage:
28 V
Package:
SOT1121A
more info
MRF6V13250HS Image
Description:Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
Application Industry:
Aerospace & Defence, Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
960 MHz to 1.5 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250.03 W
Supply Voltage:
50 V
Package:
CASE 465A--06, STYLE 1 NI--780S
more info
Description:GaN on SiC, GaN HEMT from 8.5 to 9.8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
8.5 to 9.8 GHz
Power:
551 dBm
Package Type:
Flanged
Power(W):
100 to 125.89 W
Supply Voltage:
50 V
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
100 to 500 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Gain:
8 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:53.62 dBm (230 W), LDMOS Transistor from 1800 to 2000 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2 GHz
Power:
53.6 dBm
Package Type:
Surface Mount
Power(W):
229.09 W
Supply Voltage:
28 V
Package:
SOT1239B
more info
A2T18H410-24S Image
Description:Airfast RF Power LDMOS Transistor 1805-1880 MHz, 71 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
48.51 dBm
Package Type:
Flanged
Power(W):
70.96 W
Supply Voltage:
28 V
Package:
NI--1230S--4L2L
more info
Description:GaN on SiC, GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM, Broadcast, Communication, Wireless Infrast...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
46 to 47 dBm
Package Type:
Flanged
Power(W):
39.81 to 50.12 W
Gain:
7 to 8 dB
Supply Voltage:
24 V
more info
Description:Si Based DMOS Transistor
Application Industry:
Aerospace & Defence, Radar, ISM, Avionics
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
2 to 175 MHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:5 W LDMOS Integrated Doherty MMIC from 859 to 960 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
859 to 960 MHz
Power:
28 to 37 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
0.63 to 5 W (P3dB)
Supply Voltage:
28 V
more info
MRF6V2150N Image
Description:Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
10 to 450 MHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC
more info

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