RF Transistors - Page 225

2360 RF Transistors from 26 Manufacturers meet your specification.
Description:GaN on SiC, GaN HEMT from 2.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
2.6 GHz
Power:
45.8 dBm
Package Type:
Flanged
Power(W):
38.02 W
Supply Voltage:
50 V
more info
Description:3.3 to 3.8 GHz, HEMT Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse, CW
Frequency:
3.3 to 3.8 GHz
Power:
48.13 dBm
Package Type:
Flanged
Power(W):
65.01 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:DC to 3.5 GHz, GaN HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
46.98 dBm
Package Type:
Surface Mount
Power(W):
49.89 W
Supply Voltage:
50 V
Package:
SOT467C
more info
Description:GaAs FET from 9.5 to 10.5 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
9.5 to 10.5 GHz
Power:
38.5 to 39.5 dBm
Package Type:
Flanged
Power(W):
7.08 to 8.91 W
Supply Voltage:
10 V
more info
Description:DC to 3.5 GHz, HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
DC to 3.5 GHz
Power:
46.53 dBm
Package Type:
Die
Power(W):
44.98 W
Gain:
12 dB
Supply Voltage:
28 V
more info
BLA9G1011LS-300 Image
Description:300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
Application Industry:
Aerospace & Defence, RF Energy, Avionics, Wireless...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
55.01 dBm
Package Type:
Surface Mount
Power(W):
316.96 W
Supply Voltage:
32 V
Package:
SOT502B
more info
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
14 dBm
Package Type:
Surface Mount
Power(W):
0 to 0.03 W
Gain:
9.5 to 10.5 dB
Supply Voltage:
2 V
Package:
LG
more info
Description:15 W, GaN on Si Transistor from 10 MHz to 2.7 GHz
Application Industry:
RF Energy, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
10 MHz to 2.7 GHz
Power:
41.76 dBm
Package Type:
Surface Mount
Power(W):
15 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
PDFN-14
more info
Description:A 20 W LDMOS RF transistor for broadcast applications and industrial applications in the HF and VHF band.
Application Industry:
ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
10 to 500 MHz
Power:
43.01 dBm
Package Type:
Surface Mount
Power(W):
20 W
Supply Voltage:
50 V
Package:
SOT467C
more info
Description:GaN on SiC, GaN HEMT from DC to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
39.5 dBm
Package Type:
Surface Mount
Power(W):
8.91 W
Supply Voltage:
50 V
more info

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