RF Transistors - Page 225

2357 RF Transistors from 26 Manufacturers meet your specification.
Description:GaAs HEMT from 12 GHz
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaAs
Frequency:
12 GHz
Power:
10 dBm
Package Type:
Chip
Power(W):
0 to 0.01 W
Gain:
9.5 to 10.5 dB
Supply Voltage:
2 V
more info
Description:250 Watts GaN on SiC HEMT from DC to 2 GHz
Application Industry:
Test & Measurement, Wireless Infrastructure, Aeros...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 2 GHz
Power:
53.38 to 54.31 dBm
Package Type:
Flanged
Power(W):
250 W
Gain:
15.4 to 16.5 dB
more info
Description:51.46 dBm (140 W), LDMOS Transistor from 2500 to 2700 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.5 to 2.7 GHz
Power:
51.46 dBm
Package Type:
Surface Mount
Power(W):
139.96 W
Supply Voltage:
28 V
Package:
SOT502B
more info
Description:GaAs FET from 5.9 to 6.4 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
5.9 to 6.4 GHz
Power:
39.5 to 40.5 dBm
Package Type:
Flanged
Power(W):
8.91 to 11.22 W
Supply Voltage:
10 V
Package:
IK
more info
Description:500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
Application Industry:
Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.9 to 3.5 GHz
Power:
57.1 dBm
Package Type:
Flanged
Power(W):
512.86 W
Supply Voltage:
50 V
more info
Description:36.99 dBm (5 W), LDMOS Transistor from 10 to 2500 MHz
Application Industry:
Broadcast, ISM, Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
10 MHz to 2.5 GHz
Power:
36.99 dBm
Package Type:
Surface Mount
Power(W):
5 W
Supply Voltage:
28 V
Package:
SOT1179-2
more info
Description:GaN on SiC, GaN HEMT from 8.5 to 9.8 GHz
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
8.5 to 9.8 GHz
Power:
47 to 48 dBm
Package Type:
Flanged
Power(W):
50.12 to 63.1 W
Supply Voltage:
50 V
more info
Description:450 W RF GaN on SiC HEMT from 3.6 to 3.7 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
3600 to 3700 MHz
Power:
56.53 dBm
Package Type:
Flanged
Power(W):
450 W
Gain:
11.5 dB
Supply Voltage:
50 V
more info
Description:55 W LDMOS Power Transistor from 5 to 520 MHz for LMR Applications
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
Frequency:
1 to 520 MHz
Package Type:
Flanged
Supply Voltage:
12.5 to 14 V
more info
Description:GaAs FET from 4.4 to 5.0 GHz
Application Industry:
Communication, Wireless Infrastructure
Transistor Type:
FET
Technology:
GaAs
Frequency:
4.4 to 5.0 GHz
Power:
43.5 to 44.5 dBm
Package Type:
Flanged
Power(W):
22.39 to 28.18 W
Package:
IB
more info

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